A batch soldering method includes providing a first passive device, arranging the first passive device on a first metal region of a substrate with a region of first solder material between the first passive device and the substrate, providing a semiconductor die, arranging the semiconductor die on a second metal region of the substrate with a region of second solder material between the semiconductor die and the substrate, and performing a common soldering step that simultaneously forms a first soldered joint from the region of first solder material and forms a second soldered joint from the region of second solder material. The common soldering step is performed at a soldering temperature such that one or more intermetallic phases form within the second soldered joint, each of the one or more intermetallic phases having a melting point above the second solder material and the soldering temperature.

Methods for processing a metal substrate for use in a power electronics device are provided. In one example, the method includes placing a metal substrate on a support associated with a laser system. The method includes performing a pulsed laser treatment process on at least a portion of the surface of the metal substrate. The pulsed laser treatment process exposes the at least a portion of the surface of the metal substrate to a plurality of laser pulses to modify a surface roughness of the at least a portion of the surface of the metal substrate. After performing the pulsed laser treatment process, the method includes creating a metallized interface for coupling an electrical component to the metal substrate at the at least a portion of the surface of the metal substrate.

A brazing material is interposed between an aluminum-based material and an iron-based material plated with Ni. The brazing material has a structure in which an Al—Si—Ni based alloy layer and an Al layer are bonded via a flux layer. A structure for brazing is formed such that the Al—Si—Ni based alloy layer is located on the aluminum-based material side and the Al layer is located on the iron-based material side. The structure is heated in a furnace and is thereafter cooled, thereby obtaining a brazed joint body in which the Ni plating that is a barrier layer remains and an Al—Ni layer is formed.

A brazing material is interposed between an aluminum-based material and an iron-based material plated with Ni. The brazing material has a structure in which an Al—Si—Ni based alloy layer and an Al layer are bonded via a flux layer. A structure for brazing is formed such that the Al—Si—Ni based alloy layer is located on the aluminum-based material side and the Al layer is located on the iron-based material side. The structure is heated in a furnace and is thereafter cooled, thereby obtaining a brazed joint body in which the Ni plating that is a barrier layer remains and an Al—Ni layer is formed.

Systems and methods are disclosed that may include identifying a first coefficient of thermal expansion for a first component, the first component including component pins having a first pitch value; identifying a second coefficient of thermal expansion for a second component, the second component associated with electrically conductive pads; determining a relative expansion value based on the first coefficient of thermal expansion and the second coefficient of thermal expansion; determining a change in temperature value of the first component and the second component, the change in temperature value indicating a change in temperature caused by a soldering process; and determining a second pitch value for the electrically conductive pads based on a product of the relative expansion value, the first pitch value, and the change in temperature value, the second pitch value causing an alignment between the component pins and the electrically conductive pads during the soldering process.

Systems and methods are disclosed that may include identifying a first coefficient of thermal expansion for a first component, the first component including component pins having a first pitch value; identifying a second coefficient of thermal expansion for a second component, the second component associated with electrically conductive pads; determining a relative expansion value based on the first coefficient of thermal expansion and the second coefficient of thermal expansion; determining a change in temperature value of the first component and the second component, the change in temperature value indicating a change in temperature caused by a soldering process; and determining a second pitch value for the electrically conductive pads based on a product of the relative expansion value, the first pitch value, and the change in temperature value, the second pitch value causing an alignment between the component pins and the electrically conductive pads during the soldering process.

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

A method for laser soldering includes selecting a copper-containing material as a filler material, supplying the filler material at a butt joint of two components, and melting the filler material in a main process zone by means of laser radiation in an advancement direction. The filler material in the main process zone is melted by means of laser radiation of a wavelength λH in the blue or green spectral range with 400 nm≤λH≤600 nm.

A method for laser soldering includes selecting a copper-containing material as a filler material, supplying the filler material at a butt joint of two components, and melting the filler material in a main process zone by means of laser radiation in an advancement direction. The filler material in the main process zone is melted by means of laser radiation of a wavelength λH in the blue or green spectral range with 400 nm≤λH≤600 nm.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.