Patent classifications
B23K1/19
High temperature capable braze assembly
The present invention relates to an article comprising a ceramic substrate (310) comprising a source of zirconium oxide; a metallic substrate (320); and a braze joint disposed between the ceramic substrate and the metallic substrate. The braze joint comprises (i) a gold rich phase (330) interfacing against a surface of the ceramic substrate. The gold rich phase comprises a refractory metal selected from the group consisting of molybdenum, tungsten, niobium, tantalum and combinations thereof; and (ii) a second metallic phase (340) comprising a metal selected form the group consisting of nickel, iron, vanadium, cobalt, chromium, osmium, tantalum or combinations thereof.
High temperature capable braze assembly
The present invention relates to an article comprising a ceramic substrate (310) comprising a source of zirconium oxide; a metallic substrate (320); and a braze joint disposed between the ceramic substrate and the metallic substrate. The braze joint comprises (i) a gold rich phase (330) interfacing against a surface of the ceramic substrate. The gold rich phase comprises a refractory metal selected from the group consisting of molybdenum, tungsten, niobium, tantalum and combinations thereof; and (ii) a second metallic phase (340) comprising a metal selected form the group consisting of nickel, iron, vanadium, cobalt, chromium, osmium, tantalum or combinations thereof.
Method for brazing titanium alloy components with zirconia-based ceramic components for horology or jewellery
A method for brazing a first ceramic component and a second metal alloy component, to make a structural or external timepiece element, a zirconia-based ceramic is chosen for the first component and a titanium alloy for the second component, a first recess is made inside the first component, set back from a first surface in a junction area with a second surface of the second component, braze material is deposited on this first surface and inside each recess, the second surface is positioned in alignment with the first surface to form an assembly, this assembly is heated in a controlled atmosphere to above the melting temperature of the braze material, in order to form the braze in the junction area.
WELD-BRAZING TECHNIQUES
A method includes positioning a braze material along a defect of a component of a turbine system, positioning a cover over the braze material, and focusing a heat source on the cover to melt the braze material along the defect.
WELD-BRAZING TECHNIQUES
A method includes positioning a braze material along a defect of a component of a turbine system, positioning a cover over the braze material, and focusing a heat source on the cover to melt the braze material along the defect.
COPPER/CERAMIC ASSEMBLY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
A copper/ceramic bonded body includes: a copper member (12) made of copper or a copper alloy; and a ceramic member (11) made of nitrogen-containing ceramics, the copper member (12) and the ceramic member (11) being bonded to each other, in which a Mg solid solution layer in which Mg is solid-soluted in a Cu matrix is formed at a bonding interface between the copper member (12) and the ceramic member (11), an active metal nitride layer (41) containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member (11) side, and a thickness of the active metal nitride layer (41) is set to be in a range of 0.05 μm or more and 1.2 μm or less.
Room temperature glass-to-glass, glass-to-plastic and glass-to-ceramic/semiconductor bonding
A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.
Component joining apparatus, component joining method and mounted structure
A component joining apparatus, which can realize positioning between a component and a substrate with high accuracy by avoiding influence of thermal expansion of the substrate at the time of joining the component to the substrate by heating at a high temperature, includes a component supply head holding a component and a heating stage heating and holding a substrate, in which a heating region where the heating stage contacts the substrate includes a joining region of the substrate in which the component is joined, and the substrate is larger than the heating stage and a peripheral part of the substrate does not contact the heating stage.
Component joining apparatus, component joining method and mounted structure
A component joining apparatus, which can realize positioning between a component and a substrate with high accuracy by avoiding influence of thermal expansion of the substrate at the time of joining the component to the substrate by heating at a high temperature, includes a component supply head holding a component and a heating stage heating and holding a substrate, in which a heating region where the heating stage contacts the substrate includes a joining region of the substrate in which the component is joined, and the substrate is larger than the heating stage and a peripheral part of the substrate does not contact the heating stage.
ALUMINUM ALLOY BRAZING SHEET AND BRAZING METHOD FOR ALUMINUM ALLOY BRAZING SHEET
An aluminum alloy brazing sheet including a core material and a brazing material provided on at least one surface of the core material. The brazing material includes 5.0-9.0 mass % Si, 0.10-0.90 mass % Mg, and 0.05-0.60 mass % Bi, and further includes at least one of 0.80 mass % or less Mn and 0.60 mass % or less Ti, with the remainder being Al and inevitable impurities.