A plasma arc torch assembly is capable of additively manufacturing articles. A device may additively manufacture at least a portion of an article using the plasma arc torch assembly. A device may deactivate at least one plasma arc associated with the plasma arc torch assembly. A device may perform plasma arc surface smoothing of the article using the plasma arc torch assembly.

A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.

An apparatus and method for cleaning an oxide film using a direct current reverse polarity are provided. The apparatus for cleaning an oxide film formed on a workpiece may include a power supply configured to apply direct current power and to include a positive electrode terminal and a negative electrode terminal, the workpiece configured to be electrically connected to the negative electrode terminal to act as a negative electrode to which a current is applied, and a torch having a positive electrode, which is spaced apart from the oxide film by a predetermined distance and is electrically connected to the positive electrode terminal, the torch being installed to be movable relative to the workpiece. The oxide film formed on the workpiece may be removed by applying a reverse polarity direct current between the workpiece, serving as the negative electrode, and the positive electrode to generate an arc.

A method for implementing high-precision heterogeneous integration. An etch of a first bonding surface and a second bonding surface is performed to create nanostructures in the first bonding surface and/or the second bonding surface. The first and second bonding surfaces are bonded together, where a particle lands at a bonding interface resulting in an exclusion zone that is at least two times smaller than a bonding of two bonding surfaces with no nanostructures.

A work processing apparatus performs processing of a surface to be processed of a work by causing a processing head to come into sliding contact with the work held on an upper surface of a holding plate. The processing head includes a plasma electrode that generates plasma and radiates the plasma to the surface to be processed of the work. In the plasma electrode, an annular or solid cylindrical central electrode provided at a center in a radial direction and an annular outer circumferential electrode provided at an outer side in the radial direction with respect to the central electrode are arranged with an annular slit portion intermediating therebetween at a boundary position thereof, the slit portion is configured as a plasma generation space, and a processing pad is provided at bottom surfaces of the central electrode and the outer circumferential electrode.

A cordless welding machine includes first and second batteries being connected in parallel, a ground clamp connected to the first and second batteries, and a first welding electrode connected to the first and second batteries. The batteries providing a current output of at least about 40 amps.

A weld bead shaping apparatus including: a gouging torch for gouging an object to be shaped; a shape sensor for measuring a shape of the object; a slider apparatus and an articulated robot for driving the gouging torch and shape sensor; an image processing apparatus; and a robot controlling apparatus. The image processing apparatus includes: a shape data extracting unit extracting shape data of the object, from a measurement result obtained by the shape sensor; and a weld reinforcement shape extracting/removal depth calculating unit calculating a weld reinforcement shape of the weld bead from a difference between the shape data and a preset designated shape of the object, and calculating a removal depth by which gouging is performed, based on the weld reinforcement shape. The robot controlling apparatus controls the slider apparatus, the articulated robot, and the gouging torch based on the weld reinforcement shape and the removal depth.

A method for plasma cutting of workpieces, in which use is made of at least one plasma cutting torch having at least one plasma torch body, one electrode and one nozzle, through the nozzle opening of which at least one plasma gas or plasma gas mixture flows and which constricts the plasma jet, wherein, before the plunge cutting of the plasma jet into and through the workpiece, a washout is formed by the workpiece being exposed to the plasma jet from the workpiece surface at least for a duration t2 such that material of the workpiece is removed from the workpiece surface and the washout is produced.

A blade unit, including a substantially hollow-cylindrical shape with an at least partially non-rotationally symmetrical inner contour, for rotationally secured mounting on a cooperating tool shaft of a cleaning apparatus. The blade unit further includes at least one first scraping blade which extends parallel to a longitudinal extent of the blade unit and has a straight cutting edge. The blade unit further includes at least one second scraping blade which extends parallel to the longitudinal extent of the blade unit and has a serrated cutting edge, the at least one first and second scraping blades being distributed uniformly in a circumferential direction.

Techniques for processing a wafer involve patterning the wafer to define via locations within dies of the wafer and simultaneously define saw street indentation locations within saw street regions of the wafer. The saw street regions are disposed between the dies of the wafer. Such techniques further involve creating a set of indentations within the wafer. The set of indentations includes via indentations at the via locations within the dies configured to support electrically conductive interconnects and saw street indentations at the saw street indentation locations within the saw street regions configured to facilitate dicing.