A method of manufacturing a heat exchanger is provided. The method includes forming a first substrate by additively manufacturing a body defining a first outer surface and a second outer surface opposite the first outer surface, a first partial fluid flow channel formed within the first outer surface, a second partial fluid flow channel formed within the second outer surface, and at least one internal fluid flow channel completely formed within the body, and coupling the first substrate to a second substrate including a partial fluid flow channel formed within a surface of the second substrate such that the first partial fluid flow channel of the first substrate and the partial fluid flow channel of the second substrate combine to form a combined fluid flow channel.

A method of manufacturing a heat exchanger is provided. The method includes forming a first substrate by additively manufacturing a body defining a first outer surface and a second outer surface opposite the first outer surface, a first partial fluid flow channel formed within the first outer surface, a second partial fluid flow channel formed within the second outer surface, and at least one internal fluid flow channel completely formed within the body, and coupling the first substrate to a second substrate including a partial fluid flow channel formed within a surface of the second substrate such that the first partial fluid flow channel of the first substrate and the partial fluid flow channel of the second substrate combine to form a combined fluid flow channel.

A method includes disposing a hydride of a transition metal on a first metallic material, where at least one of the first metallic material or a second metallic material includes a surface oxide layer. The method includes performing a diffusion bonding operation to bond the first metallic material to the second metallic material. During the diffusion bonding operation, the hydride of the transition metal chemically reacts with the surface oxide layer.

A method includes disposing a hydride of a transition metal on a first metallic material, where at least one of the first metallic material or a second metallic material includes a surface oxide layer. The method includes performing a diffusion bonding operation to bond the first metallic material to the second metallic material. During the diffusion bonding operation, the hydride of the transition metal chemically reacts with the surface oxide layer.

A method of operating a thermocompression bonding system is provided. The method includes the steps of: bringing first conductive structures of a semiconductor element into contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; and moving the semiconductor element relative to the substrate along at least one substantially horizontal direction using a motion system of at least one of the semiconductor element and the substrate.

A method for the additive manufacturing of an object and a system for manufacturing an object. The method includes depositing a second foil sheet onto the first foil sheet, wherein the first foil sheet and the second foil sheet each comprise a structural layer, forming a layer stack comprising the first foil sheet and the second foil sheet, the layer stack comprising an object section and at least one support section configured to enclose the object section in the layer stack, and applying at least one of heat or pressure to opposite sides of the layer stack with a first plate and a second plate, wherein applying the at least one of heat or pressure increases he temperature of the layer stack to a temperature lower than the melting temperature of the structural layer, and the at least one of at or pressure bonds the first foil sheet to the second foil sheet in the layer stack, the first plate and the second plate are in contact with the at least one support section, and the at least one support section is configured to conduct the at least one of heat or pressure through the layer stack to the object section.

Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

A manufacturing method of a hot forming mold of a center pillar including a cooling unit is provided. The method includes a step of preparing a material by dividing the material, a cooling channel processing step of processing cooling channels on a front surface and a rear surface within a contour line by center pillar design information input in advance to an NC processor and cooling channel design information, a solid phase diffusion bonding step, a mold material processing step of processing along the contour line by the center pillar design information input in advance through the NC processor to manufacture a mold material, and a thermal processing step of heating the mold material at a predetermined temperature.

A manufacturing method of a hot forming mold of a center pillar including a cooling unit is provided. The method includes a step of preparing a material by dividing the material, a cooling channel processing step of processing cooling channels on a front surface and a rear surface within a contour line by center pillar design information input in advance to an NC processor and cooling channel design information, a solid phase diffusion bonding step, a mold material processing step of processing along the contour line by the center pillar design information input in advance through the NC processor to manufacture a mold material, and a thermal processing step of heating the mold material at a predetermined temperature.