Patent classifications
B23K20/16
Semiconductor element bonding body, semiconductor device, and method of manufacturing semiconductor element bonding body
A semiconductor element bonding body including: a substrate, in which a concave portion is formed; and a semiconductor element placed in the concave portion to be mounted to the substrate. A portion of the substrate in which the concave portion is formed is made of Cu. The concave portion has a perimeter portion in which a level difference is formed, and the level difference has a height d of 20 μm or more and less than 50 μm. The concave portion has a bottom surface having a flatness degree of λ/8.7 μm or more and λ/1.2 μm or less when a wavelength λ of a laser is 632.8 nm. A metal film is formed on the semiconductor element, and the bottom surface of the concave portion and the metal film are bonded directly to each other.
Bonded body and insulating circuit substrate
A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.
COMPONENTS AND THE MANUFACTURE THEREOF VIA WELDING WITH REDUCED ALLOY-DEPLETION
Systems and methods form induction rotors by performing isostatic pressing (HIP) to weld clad to a shaft, which allows for scaling the manufacturing of solid steel rotors, as compared to conventional techniques. In examples, the rotors are designed for high-speed motors and may include recessed short circuit rings and/or end rings. An exemplary process molds an alloy powder into cladding such that heretofore unachievable rotor designs are achievable according to systems and methods described herein. In examples, a thin source-layer is introduced to welding zones, thereby enriching and strengthening the resulting joint at welding zones. The source-layer may be introduced by adding an intermediate layer comprising the source material between the materials being welded. The reduced alloy-depletion welding disclosed herein strengthens the welding area joints and provides for the manufacture of component designs, which were previously unachievable due to alloy-depletion weaknesses and environmental constraints.
Preform Diffusion Soldering
A method of joining a semiconductor die to a substrate includes: applying a solder preform to a metal region of the semiconductor die or to a metal region of the substrate, the solder preform having a maximum thickness of 30 μm and a lower melting point than both metal regions; forming a soldered joint between the metal region of the semiconductor die and the metal region of the substrate via a diffusion soldering process and without applying pressure directly to the die; and setting a soldering temperature of the diffusion soldering process so that the solder preform melts and fully reacts with the metal region of the semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the melting point of the preform and the soldering temperature.
Batch Diffusion Soldering and Electronic Devices Produced by Batch Diffusion Soldering
A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.
Transient liquid phase bonding of surface coatings metal-covered materials
A method for bonding components is disclosed. The method may comprise positioning an interlayer between a metallic component and a metal-plated non-metallic component at a bond region, heating the bond region to a bonding temperature to produce a liquid at the bond region, and maintaining the bond region at the bonding temperature until the liquid has solidified to form a bond between the metallic component and the metal-plated non-metallic component at the bond region. A method for providing a part having a customized coating is also disclosed. The method may comprise applying a metallic coating on a surface of a metallic substrate, and bonding the metallic coating to the metallic substrate by a transient liquid phase bonding process to provide the part having the customized coating.
Transient liquid phase bonding of surface coatings metal-covered materials
A method for bonding components is disclosed. The method may comprise positioning an interlayer between a metallic component and a metal-plated non-metallic component at a bond region, heating the bond region to a bonding temperature to produce a liquid at the bond region, and maintaining the bond region at the bonding temperature until the liquid has solidified to form a bond between the metallic component and the metal-plated non-metallic component at the bond region. A method for providing a part having a customized coating is also disclosed. The method may comprise applying a metallic coating on a surface of a metallic substrate, and bonding the metallic coating to the metallic substrate by a transient liquid phase bonding process to provide the part having the customized coating.
Electronic devices formed in a cavity between substrates and including a via
An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.
Electronic devices formed in a cavity between substrates and including a via
An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.
Processes and tooling associated with diffusion bonding the periphery of a cavity-back airfoil
A fixture assembly includes a first fixture portion, a second fixture portion that interfaces with the first fixture portion, and a sub-fixture movably mounted to the first fixture portion. A multiple of actuators selectively move the sub-fixture toward the second fixture portion. A method of manufacturing a fan blade includes deploying the sub-fixture from the first fixture portion to effectuate a peripheral diffusion bond to join the blade body and the cover of the fan blade.