A solid-state bonding method sandwiches an intermediate layer between a pair of refractory metal members to form a composite bonding assembly. This sandwiching can be repeated with multiple refractory metal members. The intermediate layer is substantially uniform of at most 75 μm thickness and composed of a material that is soluble and diffusive in the refractory metal members, such as any of carbon, silicon, chromium, iron, cobalt, and nickel. Compressive pressure is applied, and the assembly is heated to a specified elevated temperature of at least 1280° C. The applied pressure and elevated temperature are maintained until the intermediate layer has dissolved surface oxides and asperities in the refractory metal members and has completely diffused into the refractory metal to create a seamless refractory metal bond. The pressures and temperatures needed are much lower than those required in direct diffusion bonding of refractory metals.

A steel joined body includes a plurality of steels joined together, the plurality of steels including a joint interface having a carbon concentration of 0.20 mass % or more and 2.10 mass % or less, and the steel joined body including a concentration gradient layer having a carbon concentration decreasing with distance from the joint interface.

A bonding member that includes a resin body defining an airtight interior, and a bonding material enclosed in the interior of the resin body. The bonding material is a mixed powder that includes a plurality of particles of a first metal powder and a plurality of particles of a second metal powder. The second metal powder reacts with the first metal powder when melted to thereby produce an intermetallic compound. The resin body has a melting point higher than a softening point of the mixed powder.

A bonding member that includes a resin body defining an airtight interior, and a bonding material enclosed in the interior of the resin body. The bonding material is a mixed powder that includes a plurality of particles of a first metal powder and a plurality of particles of a second metal powder. The second metal powder reacts with the first metal powder when melted to thereby produce an intermetallic compound. The resin body has a melting point higher than a softening point of the mixed powder.

A bonding apparatus bonds a semiconductor die, which has a first mam surface provided with a bump electrode, to a substrate by means of thermo-compression, with a thermo-compression film being interposed therebetween. The bonding apparatus includes: an intermediate stage that has a die placing surface on which the semiconductor die is placed such that the die placing surface faces the first main surface; and a bonding tool which detachably holds a second main surface of the semiconductor die that is placed on the intermediate stage, the second main surface being on the reverse side of the first main surface. The intermediate stage has a push-up mechanism which applies, to the first main surface of the semiconductor die, a force for separating the semiconductor die therefrom in the normal direction of the die placing surface (in a Z-axis direction).

A method for joining a first metal part with a second metal part, the metal parts having a solidus temperature above 1100° C., includes applying a melting depressant composition on a surface of the first metal part, the melting depressant composition including a melting depressant component that includes at least 25 wt % boron and silicon for decreasing a melting temperature of the first metal part; bringing the second metal part into contact with the melting depressant composition at a contact point on said surface; heating the first and second metal parts to a temperature above 1100° C.; and allowing a melted metal layer of the first metal component to solidify, such that a joint is obtained at the contact point. The boron at least partly originates from a boron compound selected from any of the following compounds: boric acid, borax, titanium diboride and boron nitride. The melting depressant composition and related products are also described.

A bonding method is capable of realizing high bonding strength and connection reliability even at a connection part in a high temperature area by means of simple operation low temperature bonding. The method includes a first step wherein, on at least one of the bonded surfaces of two materials to be bonded having a smooth surface, a thin film of noble metal with a volume diffusion coefficient greater than that of the base metal of the material to be bonded is formed using an atomic layer deposition method at a vacuum of 1.0 Pa or higher, a second step wherein a laminate is formed by overlapping the two materials to be bonded so that the bonded surfaces of the two materials are connected through the thin film, and a third step wherein the two materials to be bonded are bonded by holding the laminate at a predetermined temperature.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a Mg—N compound phase extending from a ceramic member side to a copper member side is present at a bonded interface between the copper member and the ceramic member, and at least a part of the Mg—N compound phase enters into the copper member.

A multiple spot vaporizing foil actuator weld (VFAW) system includes a target sheet layer secured relative to a stabilizing component, such that standoff components may be arranged sandwichably between the target and a flier sheet layer. An electrically insulating layer separates the flier from a vaporizing component sheet layer, which may comprise at least two vaporizing subsections configured to have less conductive material than at least three dividing subsections that separate the vaporizing subsections. The geometry and/or other features of the vaporizing subsections may be varied to optimize the vaporization. A second electrically insulated stabilizing component may sandwichably secure the above components between the first stabilizing component in order to control the forces generated in the VFAW process. The method involves loading the vaporizable component sheet layer with electrons via applied voltage such that the vaporizing subsections sublimate. The rapidly expanding gas particles accelerate the flier, completing the weld.

A method for selectively adhering braze powders to a surface comprises applying a binder material to a surface, depositing a braze powder on the binder material, and then directing a laser beam onto the braze powder while the laser beam moves along a predetermined path relative to the surface. The laser beam selectively heats the braze powder and the binder material along the predetermined path such that the binder material is removed and the braze powder is sintered and bonded to the surface. Thus, a braze deposit is formed at one or more predetermined locations on the surface. After forming the braze deposit, excess braze powder and binder material, that is, the braze powder and binder material not selectively heated by the laser, are removed from the surface.