Methods and compositions are provided for improving metal dusting corrosion, abrasion resistance and/or erosion resistance for various materials, preferably for applications relating to high-temperature reactors, including dense fluidized bed reactor components. In particular, cermets comprising (a) at least one ceramic phase selected from the group consisting of metal carbides, metal nitrides, metal borides, metal oxides, metal carbonitrides, and mixtures of thereof and (b) at least one metal alloy binder phase are provided. Ceramic phase materials include chromium carbide (Cr.sub.23C.sub.6). Metal alloy binder phase materials include β-NiAl intermetallic alloys and Ni.sub.3Sn.sub.2 intermetallic alloys, as well as alloys that contain α-Cr and/or γ′-Ni.sub.3Al hard phases. Preferably, bimetallic materials are provided when the cermet compositions are applied using a laser, e.g., a laser cladding method such as high power direct diode (HPDD) laser, or by plasma-based methods such as plasma transfer arc (PTA) welding and powder plasma welding (PPW).

A laser machining apparatus includes, a processing chamber, a window disposed in a surface of the processing chamber, a substrate carrier disposed inside the processing chamber and facing the window, a laser irradiator which irradiates a laser onto the substrate carrier through the window, a protector supplier disposed on a side of the processing chamber, a protector retriever disposed on an opposite side of the processing chamber opposite to the side of the processing chamber, and a protector which connects the protector supplier with the protector retriever, where at least a portion of the protector is disposed between the substrate carrier and the window in the processing chamber.

An ultrasonic wave is applied to an upper surface of an ingot via a liquid layer, in a state in which an outer circumferential region of a lower surface of the ingot is sucked. A lower side around an outer circumferential arc-shaped portion of the lower surface of the ingot is open so that liquid that serves as a medium of the ultrasonic wave does not collect around the outer circumferential arc-shaped portion of the lower surface of the ingot. As a result, a peel-off layer formed in the ingot is not immersed in liquid when an ultrasonic wave is applied to the upper surface of the ingot via the liquid layer. Consequently, even when the ingot becomes thin, the ingot can be separated at the peel-off layer, and a wafer can be peeled off from the ingot.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

A method for the additive manufacturing of a component having the following steps: additively building up multiple sub-sections for the component using a powder bed-based method, arranging the sub-sections to form a composite and additively completing the component, wherein material is deposited, by a deposition welding method, along a peripheral direction around the composite of the sub-sections in such a way that the sub-sections are integrally bonded to each other.

Methods of separating a glass web include exposing a separation path on the glass web to a laser beam that produces thermal stress along the separation path without damaging the glass web. The methods further include redirecting a portion of the laser beam to create a defect on the separation path while the separation path is under thermal stress produced during the exposing the separation path on the glass web to the laser beam, whereupon the glass web separates along the separation path in response to creating the defect. Apparatus are further provided for separating a glass web with at least one laser beam generator that produces a laser beam to heat a separation path and a mirror configured to reflect an end portion of the laser beam to create a defect at a location of the separation path on the glass web.

A pump features a trimmed impeller having a trimmed impeller diameter that is less than a standard full-sized diameter of a standard full-sized impeller for a standard full-sized casing, and having a circumferential outer edge; and a modified standard full-sized casing having dimensions corresponding to the standard full-sized casing and configured to house the trimmed impeller for pumping a fluid, having an outer peripheral wall, and having an inner annular volute portion between the circumferential outer edge of the trimmed impeller and the outer peripheral wall configured with a volume of material deposited using an additive manufacturing process so as to fill in vacant space otherwise caused by the trimmed impeller diameter being less than the standard full-sized impeller diameter. The additive manufacturing process is a directed energy deposition.

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

Embodiments of the present disclosure generally relate to flexible substrate fabrication. In particular, embodiments described herein relate to methods for flexible substrate fabrication which can be used to improve the life of lithium-ion batteries. In one or more embodiments, a method of fabricating alloy anodes includes forming an alloy anode using a planar flow melt spinning process including solidifying a molten material over a quenching surface of a rotating casting drum and performing a pre-lithiation surface treatment on the alloy anode.