A method for laser processing of Silicon includes placing a Kerr material into engagement with the Silicon forming an interface therebetween. A laser beam is applied having at least one subpulse in a burst envelope operating at a first wavelength. The laser beam passes through a distributive lens focusing assembly and to the Kerr material. The first wavelength is modified to a plurality of second wavelengths, some of which are effective for processing Silicon. Photoacoustic compression processing is produced by the laser pulse energy by a portion of second wavelengths delivered through the interface and to the Silicon which initiates Kerr Effect self focusing which is propagated in the Silicon by additional energy input to the Silicon thus producing a filament within the Silicon.

A reflectance detection method in which a workpiece is irradiated with a laser beam and reflectance is detected, irradiating, with a light amount H0, the workpiece with a laser beam with a first wavelength X1 shorter than a detection-target wavelength X and detecting a light amount H1 of reflected return light, irradiating the workpiece with a laser beam with a second wavelength X2 longer than the detection-target wavelength X with the light amount H0 and detecting a light amount H2 of reflected return light, and employing H calculated based on an expression shown below as the light amount of return light obtained when the workpiece is irradiated with the detection-target wavelength X and calculating reflectance obtained when the workpiece is irradiated with the detection-target wavelength X based on H/H0.

H=H1+(H2H1)(XX1)/(X2X1)

A laser system includes a buffer material at an entry surface of a substrate in which laser-induced channels are formed. The laser beam propagates through the buffer material and impinges the substrate with a central axis of the laser beam at an oblique angle of incidence. The buffer material has a refractive index that may be closer to that of the substrate than is the refractive index of the atmosphere, such as air, in which the laser system operates. The buffer material facilitates forming laser-induced channels at relative large angles with respect to the substrate surface by attenuating energy loss or other effects on the laser beam that are normally caused by the mismatch in refractive index between the environment and the substrate in the absence of the buffer material.

A laser peening processing device includes a laser oscillator configured to oscillate a laser beam; and a nozzle configured to inject liquid to a workpiece for laser peening processing, and to cause the laser beam to be incident on the liquid to irradiate the workpiece with the laser beam which propagates through the liquid. The nozzle includes a lens configured to concentrate the laser beam so that a focal point of the laser beam is formed at a processing position of the laser peening processing, a cylindrical casing configured to protect the laser beam before the laser beam is incident on the liquid, and a pipe disposed in the casing and configured to form a flow path for the liquid.

A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.

An electrostatic chuck table includes a plate-shaped base portion capable of transmitting a laser beam to be applied to a workpiece and an electrostatic attraction electrode portion capable of transmitting the laser beam. The laser beam has a transmission wavelength to the workpiece. The base portion has a first surface and a second surface opposite to the first surface. The electrode portion is formed on the first surface of the base portion. A method for using the electrostatic chuck table includes a workpiece holding step of applying a voltage to the electrode portion formed on the first surface to thereby electrostatically hold the workpiece on the second surface, and a modified layer forming step of applying the laser beam through the first surface to a predetermined position inside the workpiece held on the second surface to thereby form a modified layer inside the workpiece.

A substrate packaging structure includes an upper substrate, a lower substrate, a frit disposed there between for adhering the upper substrate and the lower substrate, and a light-diffusing component. The light-diffusing component is disposed on the upper substrate and corresponding to the frit. The light-diffusing component is utilized for diffusing a laser beam.

The invention relates to a pressure-sensitive adhesive film that comprises a backing coated on one side with a rubber adhesive containing at least 5 wt % of tackifying resin, and on the other side with a silicone epoxy varnish. Said adhesive film is suitable for temporary protection of surfaces, notably of metal surfaces.

Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

A method for fabricating a display device is provided. A laser having a power density is provided to a substrate coupling body. The substrate coupling body includes a first substrate and a second substrate coupled to the first substrate. The second substrate is separated from the first substrate. An optical property of the first substrate separated from the second substrate is measured. The power density of the laser is adjusted based on the optical property of the first substrate.