A method for processing a transparent workpiece comprises directing a laser beam oriented along a beam path into the transparent workpiece such that a portion of the laser beam directed into the transparent workpiece is a laser beam focal arc and generates an induced absorption within the transparent workpiece, the induced absorption producing a defect within the transparent workpiece. The laser beam focal arc has a wavelength , a spot size w.sub.0, and a Rayleigh range Z.sub.R that is greater than $F_D\frac{w_0^2}{},$
where F.sub.D is a dimensionless divergence factor having a value of 10 or greater. The laser beam focal arc varies in a line shift direction relative to an unaffected beam propagation direction, where the line shift direction extends in an x-direction, a y-direction, or both along a length of the laser beam focal arc, such that the defect varies in the line shift direction.

A laser annealing device includes a laser generator, a beam splitter, a /2 phase difference member, a first reflective member, and a second reflective member. The laser generator emits a laser beam. The beam splitter splits the laser beam into a first reflective light and a transmissive light. The /2 phase difference member changes a polarization component of the transmissive light. The first reflective member reflects the transmissive light having the changed polarization component. The second reflective member reflects the transmissive light having the changed polarization component in a way such that the transmissive light having the changed polarization component which is reflected from the first reflective member is incident to the beam splitter.

Methods of assembling multilayer heat exchange structures. An example method includes attaching an outer layer to a fluid isolation sheet such that a first fluid channel is defined between the outer layer and the fluid isolation sheet; and selectively attaching the fluid isolation sheet, with the outer layer attached thereto, to a structure defining a second fluid channel that is separated from the first fluid channel by the fluid isolation sheet, wherein an internal seal is selectively formed between the fluid isolation sheet and the structure without forming a seal between the outer layer and the fluid isolation sheet.

Examples are disclosed that relate to a material-coating system having properties that are tuned for fast removal via laser ablation. In one example, the material-coating system includes a substrate, a laser-ablation layer deposited on the substrate, and a topcoat layer deposited on top of the laser-ablation layer. The topcoat layer is at least partially transparent to laser light in a designated wavelength. The laser-ablation layer is tuned to absorb the designated wavelength of the laser light such that the application of the laser light in the designated wavelength to the laser-ablation layer causes the laser-ablation layer and the topcoat layer to collectively de-bond from the substrate.

A method of tokenization and use of assets, comprising: a) registering at least one asset on a distributed ledger; b) assigning the at least one asset a fungible or non-fungible token with a public key; c) reading information about the at least one asset using a reading device; d) verifying ownership of the at least one asset using a private key which matches the public key; and, e) performing a transaction with the at least one asset.

A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.

A protective film forming agent which is used for forming a protective film on a surface of a semiconductor wafer during dicing the semiconductor wafer, which is capable of forming a protective film which allows formation of a processed groove having excellent straightness by laser irradiation, and which has excellent fluorine shielding property, and a method of manufacturing a semiconductor chip using the protective film forming agent. The protective film forming agent contains a water-soluble resin (A), a light absorbing agent (B), and a solvent(S). The water-soluble resin (A) contains a water-soluble resin (A1) having an aromatic ring and a water-soluble group. The water-soluble resin (A1) may contain a benzene ring as an aromatic monocycle.

Disclosed herein relates to a sealing device for a pouch-type secondary battery, the sealing device including a light source part for irradiating light and a pressurizing part for heating and pressurizing a sealing part of a pouch-type case using light irradiated by the light source part, wherein, by applying a first light transmitting material having a high thermal conductivity and a high light refractive index to the sealing unit of the pressurizing part that contacts the sealing part of the pouch-type case, not only can the sealing part of the pouch-type case be uniformly sealed, but also can prevent damage to the sealing unit heated to a high temperature during sealing, so that the quality of the secondary battery can be improved, and at the same time, processability and economy can be improved.

A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.

A substrate having a first side and a second side opposite to the first side is processed by attaching a protective film to the first side and, after attachment, processing the substrate from the second side of the substrate. After processing from the second side, the second side is inspected for defects on the second side of the substrate. After inspection for defects, a support film is attached to the second side of the substrate. The protective film is removed from the first side of the substrate and, after removing the protective film, the first side of the substrate is inspected for defects on the first side of the substrate.