Patent classifications
B23K26/009
WAFER PROCESSING METHOD
After first processed grooves are formed by application of a laser beam to a functional layer of a wafer, first damaged regions generated in the functional layer are removed by plasma etching. As a result, damages formed by application of a laser beam can favorably be removed from the functional layer. Consequently, the flexural strength of chips formed by the wafer being divided can be increased.
Asset Identification, Registration, Tracking and Commercialization Apparatuses and Methods
A method of tokenization and use of assets, comprising: a) registering at least one asset on a distributed ledger; b) assigning the at least one asset a fungible or non-fungible token with a public key; c) reading information about the at least one asset using a reading device; d) verifying ownership of the at least one asset using a private key which matches the public key; and, e) performing a transaction with the at least one asset.
LASER PEENING DEVICE AND LASER PEENING METHOD
A laser peening device of an embodiment comprises: a laser oscillator; an irradiation nozzle for irradiating a laser beam onto an irradiation target; an optical transmission unit; a shutter attached to the optical transmission unit; a liquid feeder for supplying the irradiation nozzle with liquid so as to cause the liquid to flow along an optical path of the laser beam running from the irradiation nozzle to the irradiation target; an ongoing irradiation sensor for obtaining information on ongoing laser beam irradiation indicating whether the laser beam is being appropriately irradiated for execution of ongoing laser peening operation on the irradiation target; and a control unit for controlling the shutter according to the information on the ongoing laser beam irradiation obtained by the ongoing irradiation sensor.
Reflective detection method and reflectance detection apparatus
A reflectance detection method in which a workpiece is irradiated with a laser beam and reflectance is detected, irradiating, with a light amount H0, the workpiece with a laser beam with a first wavelength X1 shorter than a detection-target wavelength X and detecting a light amount H1 of reflected return light, irradiating the workpiece with a laser beam with a second wavelength X2 longer than the detection-target wavelength X with the light amount H0 and detecting a light amount H2 of reflected return light, and employing H calculated based on an expression shown below as the light amount of return light obtained when the workpiece is irradiated with the detection-target wavelength X and calculating reflectance obtained when the workpiece is irradiated with the detection-target wavelength X based on H/H0.
H=H1+(H2H1)(XX1)/(X2X1)
Laser bonding system and laser bonding apparatus
A laser bonding system which improves bonding between a semiconductor chip and a substrate is provided. A laser bonding system comprises a laser bonding apparatus; and a controller configured to control the laser bonding apparatus, wherein the laser bonding apparatus includes a stage which supports a substrate including a pad, and a semiconductor chip including a connection terminal; a pressurizer which moves up and down above the stage; a temperature measuring sensor configured to measure a temperature of the semiconductor chip and generate a temperature value; and a laser radiation apparatus configured to bond a pad of the substrate and a connection terminal of the semiconductor chip, using a laser beam passing through the pressurizer, and the controller lifts the pressurizer in response to the temperature value.
METHODS FOR FORMING HOLES IN SUBSTRATES
Methods for forming holes in a substrate by reducing back reflections of a quasi-non-diffracting beam into the substrate are described herein. In some embodiments, a method of processing a substrate having a first surface and a second surface includes applying an exit material to the second surface of the substrate, wherein a difference between a refractive index of the exit material and a refractive index of the substrate is 0.4 or less, and focusing a pulsed laser beam into a quasi-non-diffracting beam directed into the substrate such that the quasi-non-diffracting beam enters the substrate through the first surface. The substrate is transparent to at least one wavelength of the pulsed laser beam. The quasi-non-diffracting beam generates an induced absorption within the substrate that produces a damage track within the substrate.
APPARATUS FOR LASER PEENING HIDDEN SURFACES
A laser shock peening apparatus is provided for use with a workpiece having a cavity. The apparatus includes a tubular body configured for insertion longitudinally inward of the cavity. The tubular body has a peripheral wall bounding a laser delivery channel, and has an aperture reaching outward from the laser delivery channel through the peripheral wall. An optical device is located in the laser delivery channel. The optical device is configured to direct a laser beam outward through the aperture. Additionally, the peripheral wall has internal surfaces defining a water delivery channel configured to convey a stream of overlay water to the aperture.
METHODS FOR LASER PROCESSING ROUGH TRANSPARENT WORKPIECES USING PULSED LASER BEAM FOCAL LINES AND A FLUID FILM
A method for processing a transparent workpiece includes applying a fluid film having a first refractive index to a impingement surface of the transparent workpiece that has a second refractive index. Further, a difference between the first refractive index and the second refractive index is about 0.8 or less and the impingement surface comprises a surface roughness Ra of about 0.1 m or greater. The method also includes forming a defect in the transparent workpiece by directing a laser beam oriented along a beam pathway and output by a beam source, through the fluid film, through the impingement surface, and into the transparent workpiece such that a portion of the laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, the induced absorption producing the defect within the transparent workpiece.
Electrostatic chuck table using method
An electrostatic chuck table includes a plate-shaped base portion capable of transmitting a laser beam to be applied to a workpiece and an electrostatic attraction electrode portion capable of transmitting the laser beam. The laser beam has a transmission wavelength to the workpiece. The base portion has a first surface and a second surface opposite to the first surface. The electrode portion is formed on the first surface of the base portion. A method for using the electrostatic chuck table includes a workpiece holding step of applying a voltage to the electrode portion formed on the first surface to thereby electrostatically hold the workpiece on the second surface, and a modified layer forming step of applying the laser beam through the first surface to a predetermined position inside the workpiece held on the second surface to thereby form a modified layer inside the workpiece.
Laser cutting metal foil with a polymer backing layer
Laser cutting a metal foil by providing a polymer film as a carrier layer for the metal foil where the metal foil is ablated by the laser beam wavelength selected for laser cutting and wherein the polymer film is a polymer film that is transparent to the laser beam wavelength selected for laser cutting such that laser cutting produces metal foil cut parts in a substrate while the polymer backing remains intact for supporting the cut parts for subsequent separation of the cut parts from substrate.