Apparatus for producing an object by means of additive manufacturing, including a process chamber for receiving on a build surface of a build plate a bath of powdered material which can be solidified, a support for positioning the build plate in relation to a surface level of the bath of material, a solidifying device for solidifying a selective part of the material; and a build plate preparation means for preparation of the build surface of the build plate such that the object can be build on the build surface of the build plate. Method of producing an object by means of additive manufacturing on a build surface of a build plate using such an apparatus.

Apparatus for producing an object by means of additive manufacturing, including a process chamber for receiving on a build surface of a build plate a bath of powdered material which can be solidified, a support for positioning the build plate in relation to a surface level of the bath of material, a solidifying device for solidifying a selective part of the material; and a build plate preparation means for preparation of the build surface of the build plate such that the object can be build on the build surface of the build plate. Method of producing an object by means of additive manufacturing on a build surface of a build plate using such an apparatus.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

The present invention provides a cutting method and equipment of auxiliary packaging containers for testing. The method includes: step S001, material feeding; step S002, laser cutting; performs circumferential cutting of the part of the packaging container to be cut by the laser cutting device on the equipment body; step S003, waste gas treatment; step S004, material unloading; the equipment includes an equipment body and a clamping and positioning device and a laser cutting device, the clamping and positioning device is provided on the lower side of the laser cutting device and can be rotated relative to the laser cutting device; the equipment body is equipped with a waste gas discharge device; the cutting method and equipment of auxiliary packaging containers for testing provided by the present invention overcomes the defects of poor cutting effect, narrow application range, inconvenient cutting and low efficiency of the existing cutting methods of packaging containers.

The present invention provides a cutting method and equipment of auxiliary packaging containers for testing. The method includes: step S001, material feeding; step S002, laser cutting; performs circumferential cutting of the part of the packaging container to be cut by the laser cutting device on the equipment body; step S003, waste gas treatment; step S004, material unloading; the equipment includes an equipment body and a clamping and positioning device and a laser cutting device, the clamping and positioning device is provided on the lower side of the laser cutting device and can be rotated relative to the laser cutting device; the equipment body is equipped with a waste gas discharge device; the cutting method and equipment of auxiliary packaging containers for testing provided by the present invention overcomes the defects of poor cutting effect, narrow application range, inconvenient cutting and low efficiency of the existing cutting methods of packaging containers.

Disclosed is a film cutting apparatus for cutting a film fabric having a multilayer structure with a plurality of film layers and including a release film layer positioned at an outermost layer of one side of the film layers, the film cutting apparatus including a laser unit including a laser head configured to form a first cutting line on a predetermined first film group by cutting the first film group by selectively irradiating the first film group with a laser beam to include some film layers except for the release film layer among the film layers, and a cutting unit including a cutter configured to form a single cutting line by connecting a second cutting line and the first cutting line on a predetermined second film group by cutting the second film group using a cutting blade to include some film layers including at least the release film layer among the film layers.

Disclosed is a film cutting apparatus for cutting a film fabric having a multilayer structure with a plurality of film layers and including a release film layer positioned at an outermost layer of one side of the film layers, the film cutting apparatus including a laser unit including a laser head configured to form a first cutting line on a predetermined first film group by cutting the first film group by selectively irradiating the first film group with a laser beam to include some film layers except for the release film layer among the film layers, and a cutting unit including a cutter configured to form a single cutting line by connecting a second cutting line and the first cutting line on a predetermined second film group by cutting the second film group using a cutting blade to include some film layers including at least the release film layer among the film layers.

Provided is a wafer processing method for dividing a wafer having devices formed on a front side thereof into individual device chips, the front side being partitioned by a plurality of crossing division lines having a testing metal pattern formed in part thereof into a plurality of regions where the respective devices are formed. The method includes a first modified layer forming step of applying a laser beam of a wavelength having a transmitting property to the wafer with a focal point of the laser beam positioned inside the wafer at a first depth from the back side, thereby forming a first modified layer along a division line, and a second modified layer forming step of applying the laser beam with the focal point positioned at a second depth shallower than the first depth, thereby forming a second modified layer along the same division line.

Provided is a wafer processing method for dividing a wafer having devices formed on a front side thereof into individual device chips, the front side being partitioned by a plurality of crossing division lines having a testing metal pattern formed in part thereof into a plurality of regions where the respective devices are formed. The method includes a first modified layer forming step of applying a laser beam of a wavelength having a transmitting property to the wafer with a focal point of the laser beam positioned inside the wafer at a first depth from the back side, thereby forming a first modified layer along a division line, and a second modified layer forming step of applying the laser beam with the focal point positioned at a second depth shallower than the first depth, thereby forming a second modified layer along the same division line.

A wafer processing method includes: cutting a device layer stacked on a semiconductor substrate along division lines to form cut grooves; positioning a focal point of a laser beam having a transmission wavelength to the semiconductor substrate inside an area of the semiconductor substrate corresponding to a predetermined one of the division lines and applying the laser beam to the wafer from a back surface of the wafer, thereby forming a plurality of modified layers inside the wafer along all of the division lines; and grinding the back surface of the wafer to be thinned, causing a crack to grow from each of the modified layers formed inside the area of the semiconductor substrate corresponding to the predetermined one of the division lines to the front surface side of the wafer, thereby dividing the wafer into individual device chips.