A wafer processing method includes: cutting a device layer stacked on a semiconductor substrate along division lines to form cut grooves; positioning a focal point of a laser beam having a transmission wavelength to the semiconductor substrate inside an area of the semiconductor substrate corresponding to a predetermined one of the division lines and applying the laser beam to the wafer from a back surface of the wafer, thereby forming a plurality of modified layers inside the wafer along all of the division lines; and grinding the back surface of the wafer to be thinned, causing a crack to grow from each of the modified layers formed inside the area of the semiconductor substrate corresponding to the predetermined one of the division lines to the front surface side of the wafer, thereby dividing the wafer into individual device chips.

A cylindrical battery includes a bottom-closed cylindrical exterior package can which receives an electrode body. A lead connected to one of a positive electrode and a negative electrode of the electrode body is extended from the electrode body and is welded to a bottom portion of the exterior package can. When the bottom portion is viewed from the outside of the exterior package can, at least a part of the welding portion between the lead and the bottom portion formed by a molten mark is formed outside of a concentric circle of the bottom portion which has a diameter equivalent to the width of the lead.

A cylindrical battery includes a bottom-closed cylindrical exterior package can which receives an electrode body. A lead connected to one of a positive electrode and a negative electrode of the electrode body is extended from the electrode body and is welded to a bottom portion of the exterior package can. When the bottom portion is viewed from the outside of the exterior package can, at least a part of the welding portion between the lead and the bottom portion formed by a molten mark is formed outside of a concentric circle of the bottom portion which has a diameter equivalent to the width of the lead.

Provided is a butt laser-welding method for a metallic member in which a laser beam is scanned so as to repeatedly cross butting surfaces of metallic members to weld the metallic members to each other. When the laser beam is scanned so as to cross the butting surfaces, the closer the laser beam comes to the butting surfaces, the more an irradiation energy density of the laser beam is increased. The bottom surfaces of the molten pools formed on the metallic members are inclined so as to descend toward the butting surfaces.

Provided is a butt laser-welding method for a metallic member in which a laser beam is scanned so as to repeatedly cross butting surfaces of metallic members to weld the metallic members to each other. When the laser beam is scanned so as to cross the butting surfaces, the closer the laser beam comes to the butting surfaces, the more an irradiation energy density of the laser beam is increased. The bottom surfaces of the molten pools formed on the metallic members are inclined so as to descend toward the butting surfaces.

A numerical control device controls an additive manufacturing apparatus that manufactures a modeled object by irradiating a wire, which is a material fed by a driving force of a rotary motor, which is a driving unit, with a beam, and applying the molten material to a workpiece. The numerical control device includes an error detecting unit that detects an error in the height of the workpiece in the height direction in which the material is deposited. The numerical control device includes a condition adjusting unit, which is an adjustment unit that adjusts the supply amount of the material on the basis of the error.

An assembly and method of forming the assembly are disclosed. The assembly may include first and second components, the first component including a non-mating region and a mating region. The mating region may have an offset in a direction towards the second component and have a welding surface contacting the second component. A weld located within the welding surface may join the first and second components. The weld may be a laser weld. The method may include positioning a first component including a welding pad offset from a surrounding region of the first component such that the welding pad is in contact with a second component to form a gap between the surrounding region of the first component and the second component. The first component may then be welded to the second component in an area within the welding pad.

An assembly and method of forming the assembly are disclosed. The assembly may include first and second components, the first component including a non-mating region and a mating region. The mating region may have an offset in a direction towards the second component and have a welding surface contacting the second component. A weld located within the welding surface may join the first and second components. The weld may be a laser weld. The method may include positioning a first component including a welding pad offset from a surrounding region of the first component such that the welding pad is in contact with a second component to form a gap between the surrounding region of the first component and the second component. The first component may then be welded to the second component in an area within the welding pad.

Provided herein are embodiments of systems and methods for imparting a pattern or representation to a device using interference pattern ablation.

Laminated gasket free from liquid drug leakage. Gasket (13) to be used for a medical syringe includes main body (14) made of an elastic material and film (15) on a surface of main body (14). Gasket (13) has a circumferential surface portion (17) that can contact an inner peripheral surface of syringe barrel (11) of the syringe, and has an annular groove (22) formed circumferentially in a surface portion of the film present in the circumferential surface portion thereof. Annular groove (22) has outer edge portions (24) provided along opposite edges (23) thereof as projecting from an unprocessed surface portion of the film. Annular groove (22) has groove formation start points and end points that are connected to each other in a groove connection region. Outer edge portions (24) along the opposite edges of the annular groove have a maximum-to-minimum height difference of ≤5 μm in the groove connection region.