A system for laser processing includes a plate assembly having a first plate, a second plate secured to the first plate, and a pressure chamber located between the plates, a connector extending into and in fluid communication with the pressure chamber, and a fixture having a first end attached to the second plate of the plate assembly, a second end having surface having at least one opening and shaped to fit a part to be retained and laser processed, and a conduit extending therethrough in fluid communication with the pressure chamber and the at least one opening. During use, a pressure generated by a pump may be communicated to the conduit of the fixture through the pressure chamber to provide pressure (e.g., a suction effect) at the opening(s) to secure the part in place, e.g., with respect to another part, so they can be laser processed.

A wafer producing method for producing a wafer from an ingot, the ingot being previously formed with a separation layer along which the wafer is to be separated from the ingot. The wafer producing method includes a first ultrasonic vibration applying step of applying ultrasonic vibration to a given area of the ingot at a high density to thereby form a partially broken portion where a part of the separation layer is broken, a second ultrasonic vibration applying step of applying the ultrasonic vibration to the whole area of the ingot larger than the given area at a low density, after performing the first ultrasonic vibration applying step, thereby forming a fully broken portion where the separation layer is fully broken in such a manner that breaking starts from the partially broken portion, and a separating step of separating the wafer from the ingot along the fully broken portion.

A wafer producing method for producing a wafer from an ingot, the ingot being previously formed with a separation layer along which the wafer is to be separated from the ingot. The wafer producing method includes a first ultrasonic vibration applying step of applying ultrasonic vibration to a given area of the ingot at a high density to thereby form a partially broken portion where a part of the separation layer is broken, a second ultrasonic vibration applying step of applying the ultrasonic vibration to the whole area of the ingot larger than the given area at a low density, after performing the first ultrasonic vibration applying step, thereby forming a fully broken portion where the separation layer is fully broken in such a manner that breaking starts from the partially broken portion, and a separating step of separating the wafer from the ingot along the fully broken portion.

Methods for repairing a coated part with holes extending therethrough are disclosed. In one embodiment, a method comprises receiving a part where a coating on a first side of the part at least partially obstructs a first opening of a hole on the first side of the part. Measured hole data indicative of a position of a second opening of the hole on a second side of the part opposite the first side is then acquired. Based on the measured hole data, the first opening of the hole is cleared of the coating by laser drilling via the second opening of the hole.

Methods for repairing a coated part with holes extending therethrough are disclosed. In one embodiment, a method comprises receiving a part where a coating on a first side of the part at least partially obstructs a first opening of a hole on the first side of the part. Measured hole data indicative of a position of a second opening of the hole on a second side of the part opposite the first side is then acquired. Based on the measured hole data, the first opening of the hole is cleared of the coating by laser drilling via the second opening of the hole.

A parts fabrication apparatus has a staging fixture that is configured to position at least a portion of a molded plastic assembly that has a connective runner portion with at least one molded part extended from the connective runner portion by a severable gate portion. A laser source is energizable to direct toward the severable gate portion, from a laser output aperture positioned beneath the staged plastic assembly, a coherent light beam having sufficient energy for melting the gate portion and releasing the molded part along a drop path. A support is disposed to deflect the drop path of at least a portion of the released molded part in a direction away from the coherent light beam.

A parts fabrication apparatus has a staging fixture that is configured to position at least a portion of a molded plastic assembly that has a connective runner portion with at least one molded part extended from the connective runner portion by a severable gate portion. A laser source is energizable to direct toward the severable gate portion, from a laser output aperture positioned beneath the staged plastic assembly, a coherent light beam having sufficient energy for melting the gate portion and releasing the molded part along a drop path. A support is disposed to deflect the drop path of at least a portion of the released molded part in a direction away from the coherent light beam.

A laser processing apparatus includes a stage configured to transfer a target substrate and including an opening, an electrostatic chuck disposed on the stage and including a plurality of holes, and a laser irradiation unit disposed above the stage and spaced apart from the stage and configured to irradiate a laser beam on the target substrate. A surface of the electrostatic. chuck is in contact with the target substrate, the target substrate includes a plurality of etching regions to be etched by the laser beam and a non-etching region surrounding the plurality of etching regions of the target substrate, and the plurality of holes of the electrostatic chuck overlap the opening of the stage and the plurality of etching regions of the target substrate.

A laser processing apparatus includes a stage configured to transfer a target substrate and including an opening, an electrostatic chuck disposed on the stage and including a plurality of holes, and a laser irradiation unit disposed above the stage and spaced apart from the stage and configured to irradiate a laser beam on the target substrate. A surface of the electrostatic. chuck is in contact with the target substrate, the target substrate includes a plurality of etching regions to be etched by the laser beam and a non-etching region surrounding the plurality of etching regions of the target substrate, and the plurality of holes of the electrostatic chuck overlap the opening of the stage and the plurality of etching regions of the target substrate.

One aspect of the present disclosure is a welding method including welding an upper plate and a lower plate overlapped with the upper plate by irradiating a surface of the upper plate with a laser beam. The welding includes forming a main welding path that intersects a welding advancing direction and that includes turning points. The upper plate and the lower plate are arranged in an inclined manner with respect to a horizontal plane when viewed parallel to the welding advancing direction. In the forming the main welding path, an amount of energy applied by the laser beam in an area in a neighborhood of the turning point on a vertically upper side is designed to be larger than an amount of energy applied by the laser beam in an area in a neighborhood of the turning point on a vertically lower side.