Patent classifications
B23K26/18
Grain-oriented electrical steel sheet and magnetic domain refinement method therefor
A grain-oriented electrical steel sheet includes a groove formed on a surface and a solidified alloy layer formed under the groove, wherein the solidified alloy layer includes particles of a certain average diameter.
Protective film agent for laser dicing
A protective film agent for laser dicing that includes a solution in which at least a water-soluble resin, an organic solvent, and an ultraviolet absorber are mixed and in which the content of sodium (Na) of the solution is equal to or lower than 100 ppb in weight ratio. Preferably, the solution further includes an antioxidant.
OXYGENATED HIERARCHICALLY POROUS CARBON COMPOUNDS AS SCAFFOLDS FOR METAL NANOPARTICLES
In one aspect, an oxygenated hierarchically porous carbon (an “O-HPC”) is provided, the O-HPC comprising: a hierarchically porous carbon (an “HPC”), the HPC comprising a surface, the surface comprising: (A) first order pores having an average diameter of between about 1 μm and about 10 μm; and (B) walls separating the first order pores, the walls comprising: (1) second order pores having a peak diameter between about 7 nm and about 130 nm; and (2) third order pores having an average diameter of less than about 4 nm, wherein at least a portion of the HPC surface has been subjected to O.sub.2 plasma to oxygenate and induce a negative charge to the surface. In one aspect, the O-HPC further comprises metal nanoparticles dispersed within the first, second, and third order pores. Methods for making and using the metal nanoparticle-impregnated O-HPCs are also provided.
Laser processing method
Provided is a laser processing method for drilling a hole in a glass substrate with using a carbon dioxide laser, including the steps of: irradiating the laser onto a drilling position on the glass substrate from a side of the glass substrate on which a protective sheet is adhered so as to form a blind hole; removing the protective sheet from the glass substrate and performing an annealing treatment; and performing a wet-etching process on a side of the glass substrate not irradiated with the laser so as to convert the blind hole into a through hole.
Laser processing method
Provided is a laser processing method for drilling a hole in a glass substrate with using a carbon dioxide laser, including the steps of: irradiating the laser onto a drilling position on the glass substrate from a side of the glass substrate on which a protective sheet is adhered so as to form a blind hole; removing the protective sheet from the glass substrate and performing an annealing treatment; and performing a wet-etching process on a side of the glass substrate not irradiated with the laser so as to convert the blind hole into a through hole.
Semiconductor Structure and Method
A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.
METHOD FOR LASER MARKING A METALLIC SURFACE
A method for marking a location on a surface of a component includes irradiating the location with a first laser beam to create a first mark having a first color. The location defines a normal extending perpendicularly therefrom. The first laser beam is disposed at a first angle relative to the normal. The method also includes irradiating the location with a second laser beam to create a second mark having a second color different than the first color. The second laser beam is disposed at a second angle relative to the normal. The second angle is different than the first angle.
METHOD FOR LASER MARKING A METALLIC SURFACE
A method for marking a location on a surface of a component includes irradiating the location with a first laser beam to create a first mark having a first color. The location defines a normal extending perpendicularly therefrom. The first laser beam is disposed at a first angle relative to the normal. The method also includes irradiating the location with a second laser beam to create a second mark having a second color different than the first color. The second laser beam is disposed at a second angle relative to the normal. The second angle is different than the first angle.
DEVICE INCLUDING VIAS AND METHOD AND MATERIAL FOR FABRICATING VIAS
A device includes a glass substrate, a plurality of electronic components, a metallization layer, and a plurality of vias. The plurality of electronic components are on a first surface of the glass substrate. The metallization layer is on a second surface of the glass substrate opposite to the first surface. The plurality of vias extend through the glass substrate. At least one via is in electrical communication with an electronic component and the metallization layer.
LASER PROCESSING METHOD
For processing a workpiece held by a chuck table with branched pulsed laser beams, if it is assumed that branch intervals at which adjacent ones of the branched pulsed laser beams are spaced from each other on a surface of the workpiece are represented by L, a value calculated by dividing a processing feed speed at which the chuck table is moved with respect to a condensing lens by a processing feed unit by the frequency of the pulsed laser beam at a processing point where the branched pulsed laser beams are applied to the workpiece is represented by S, and any integer is represented by n, then the branching intervals, the processing feed speed, and the frequency of the pulsed laser beam are established to satisfy the relationship of L≠n×S.