A method and apparatus for direct writing of single crystal super alloys and metals. The method including heating a substrate to a predetermined temperature below its melting point; using a laser to form a melt pool on a surface of the substrate, wherein the substrate is positioned on a base plate, and wherein the laser and the base plate are movable relative to each other, the laser being used for direct metal deposition; introducing a superalloy powder to the melt pool; and controlling the temperature of the melt pool to maintain a predetermined thermal gradient on a solid and liquid interface of the melt pool so as to form a single crystal deposit on the substrate. The apparatus configured to generally achieve the aforementioned method.

A system and method depositing metal to form a three-dimensional (3D) part on a substrate. A wire is moved relative to a location on the substrate while a laser heats a proximal end of the wire at the location using a laser beam. The laser causes the wire and substrate to reach a melting point of the wire to fuse the wire at the location on the substrate. The wire can be preheated by passing a current through the wire.

A system and method depositing metal to form a three-dimensional (3D) part on a substrate. A wire is moved relative to a location on the substrate while a laser heats a proximal end of the wire at the location using a laser beam. The laser causes the wire and substrate to reach a melting point of the wire to fuse the wire at the location on the substrate. The wire can be preheated by passing a current through the wire.

Deposition of debris produced in laser ablation of a workpiece situated in a vacuum chamber is reduced by introduction a background gas into the vacuum chamber prior to or during laser ablation. The background gas can be introduced diffusely into the vacuum chamber and can reduce contamination of surfaces such as a surface of an optical window that faces the workpiece during processing. Directed introduction of a background gas can be used as well and in some cases the same or a different background gas is directed to a workpiece surface at the same or different pressure than that associated with diffuse introduction of the background gas to reduce contamination of the workpiece surface with laser ablation debris.

Deposition of debris produced in laser ablation of a workpiece situated in a vacuum chamber is reduced by introduction a background gas into the vacuum chamber prior to or during laser ablation. The background gas can be introduced diffusely into the vacuum chamber and can reduce contamination of surfaces such as a surface of an optical window that faces the workpiece during processing. Directed introduction of a background gas can be used as well and in some cases the same or a different background gas is directed to a workpiece surface at the same or different pressure than that associated with diffuse introduction of the background gas to reduce contamination of the workpiece surface with laser ablation debris.

A new ultrasonic aided laser joining method (UAL) for bonding dissimilar materials has been developed. The method is capable of eliminating the laser-induced bubbles at the bonding faces and to improve the joint strength over that of the conventional laser-assisted metal and plastic joining method (LAMP). Some experiments on joining titanium to polyethylene terephthalate have been conducted to show the superiority of UAL over LAMP. The results showed that the joint strength, measured in terms of failure load, was significantly increased when ultrasonic vibration was employed during laser joining. For the LAMP joined specimens, fracture normally occurred at the metal-plastic interface, whereas for the UAL joined specimens, fracture normally occurred in the parent plastic part. The improvement in joint strength is mainly due to the elimination of pores in the resolidified plastic. In addition, ultrasound vibration promotes chemical bonding between the plastic and metal parts, and this is supported by the XPS results.

A new ultrasonic aided laser joining method (UAL) for bonding dissimilar materials has been developed. The method is capable of eliminating the laser-induced bubbles at the bonding faces and to improve the joint strength over that of the conventional laser-assisted metal and plastic joining method (LAMP). Some experiments on joining titanium to polyethylene terephthalate have been conducted to show the superiority of UAL over LAMP. The results showed that the joint strength, measured in terms of failure load, was significantly increased when ultrasonic vibration was employed during laser joining. For the LAMP joined specimens, fracture normally occurred at the metal-plastic interface, whereas for the UAL joined specimens, fracture normally occurred in the parent plastic part. The improvement in joint strength is mainly due to the elimination of pores in the resolidified plastic. In addition, ultrasound vibration promotes chemical bonding between the plastic and metal parts, and this is supported by the XPS results.

An alloy comprising about 0.5 weight percent to about 2 weight percent carbon, about 15 weight percent to about 30 weight percent chromium, about 4 weight percent to about 12 weight percent nickel, up to about 3 weight percent manganese, up to about 2.5 weight percent silicon, up to about 1 weight percent zirconium, up to about 3 weight percent molybdenum, up to about 3 weight percent tungsten, up to about 0.5 weight percent boron, up to about 0.5 weight percent impurities, and iron.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

A method of detecting center coordinates of a spot welding mark includes: a linear laser light emitting step of emitting a plurality of linear laser light components with a linear irradiation trace on a spot welding mark by emitting laser light through continuous output oscillation; a waveform acquiring step of acquiring a waveform of an intensity of return light which is light generated from a processing point; an outer edge position coordinates deriving step of deriving position coordinates of three or more points on an outer edge of the spot welding mark from a peak position of the intensity of the waveform of the return light; and a center coordinates calculating step of calculating center coordinates of the spot welding mark from the position coordinates of the three or more points on the outer edge derived in the outer edge position coordinates deriving step.