An apparatus for treating a substrate is provided. The apparatus includes: a support member provided in a process chamber and configured to support the substrate; and a heater heating element provided in the support member and configured to heat the substrate, wherein at least a part of the heater heating element comprises a first region to which a laser trimming process is applied, at least another part of the heater heating element comprises a second region on which a resistance adjusting material layer is implemented by an electrolytic plating process, and the amount of heat generated in the first region that is at least a part of the heater heating element is increased by performing the laser trimming process and the amount of heat generated in the second region that is at least another part of the heater heating element is decreased by forming the resistance adjusting material layer.

An apparatus for treating a substrate is provided. The apparatus includes: a support member provided in a process chamber and configured to support the substrate; and a heater heating element provided in the support member and configured to heat the substrate, wherein at least a part of the heater heating element comprises a first region to which a laser trimming process is applied, at least another part of the heater heating element comprises a second region on which a resistance adjusting material layer is implemented by an electrolytic plating process, and the amount of heat generated in the first region that is at least a part of the heater heating element is increased by performing the laser trimming process and the amount of heat generated in the second region that is at least another part of the heater heating element is decreased by forming the resistance adjusting material layer.

A laser dicing device includes: a Gaussian laser beam emitter configured to emit a Gaussian laser beam having a Gaussian energy distribution; a laser beam modulator configured to modulate a shape of the emitted Gaussian laser beam by reducing intensity in a region surrounding a first line parallel with a laser dicing direction of the emitted Gaussian beam, the first line crossing a center of the Gaussian laser beam in a plan view; a focusing lens configured to focus a modulated Gaussian laser beam modulated by the laser beam modulator; and a substrate support configured that a substrate to be diced is seated on the support, wherein the focusing lens is configured to collect the modulated Gaussian laser beam inside the substrate seated on the substrate support.

A mask material for plasma dicing, which is used in a plasma step, whose surface roughness Rz at the surface side that does not touch with an adherend is from 0.1 μm to 1.5 μm; a mask-integrated surface protective tape; and a method of producing a semiconductor chip.

A mask material for plasma dicing, which is used in a plasma step, whose surface roughness Rz at the surface side that does not touch with an adherend is from 0.1 μm to 1.5 μm; a mask-integrated surface protective tape; and a method of producing a semiconductor chip.

With providing a workpiece that has a seed-crystal zone for microcrystalline silicon at a location proximate to the periphery of and aligned with one of transformation-scheduled regions, each of which is set to coextend with that portion of amorphous silicon which extends over one of gate fins, in a lateral straight line perpendicular to a longitudinal axis of the gate fins, a lateral crystal forming process carries out selective crystal growth by moving a continuous wave laser beam along the lateral straight line with the seed-crystal zone as a starting point to irradiate the amorphous silicon to grow crystalline silicon within the transformation-scheduled region.

A sheet processing method including irradiating a transparent conductive layer covered with a transparent sheet with a pulsed laser beam such that the pulsed laser beam is applied to a portion of the transparent conductive layer through the transparent sheet, and that the portion irradiated has an insulating property. The pulsed laser beam has a top-hat intensity distribution and has a transmittance through the transparent sheet being higher than a transmittance through the transparent conductive layer.

A sheet processing method including irradiating a transparent conductive layer covered with a transparent sheet with a pulsed laser beam such that the pulsed laser beam is applied to a portion of the transparent conductive layer through the transparent sheet, and that the portion irradiated has an insulating property. The pulsed laser beam has a top-hat intensity distribution and has a transmittance through the transparent sheet being higher than a transmittance through the transparent conductive layer.

An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.

An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.