A method for manufacturing leads in a touch screen, a touch screen, and an electronic device are provided. The method includes integrally printing a region where an ITO channel pattern lead of the touch screen is disposed; and lasering, by a laser process, the integrally printed region to form at least one of a sensing channel lead or a drive channel lead with a wiring width less than a predetermined threshold, wherein the predetermined threshold is defined according to a minimum value achievable by the laser process. According to the present disclosure, the wiring width of the at least one of the sensing channel lead or the drive channel lead is reduced, and false trigger of the touch screen caused thereby is prevented.

A method for manufacturing leads in a touch screen, a touch screen, and an electronic device are provided. The method includes integrally printing a region where an ITO channel pattern lead of the touch screen is disposed; and lasering, by a laser process, the integrally printed region to form at least one of a sensing channel lead or a drive channel lead with a wiring width less than a predetermined threshold, wherein the predetermined threshold is defined according to a minimum value achievable by the laser process. According to the present disclosure, the wiring width of the at least one of the sensing channel lead or the drive channel lead is reduced, and false trigger of the touch screen caused thereby is prevented.

An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.

An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.

The present invention provides a method of manufacturing a spark plug which is capable of securing a bonding strength at the middle of a chip while suppressing an occurrence of scattering. The method of manufacturing the spark plug having a ground electrode to which a bonding surface of a chip is welded, has a machining process of machining the ground electrode such that an area located inside an edge of a welding-planned part where the chip is welded on the ground electrode and including a center of the welding-planned part is rougher than a section except the area of the welding-planned part, and a bonding process of bonding the chip to the welding-planned part of the ground electrode after undergoing the machining process by resistance welding.

The present invention provides a method of manufacturing a spark plug which is capable of securing a bonding strength at the middle of a chip while suppressing an occurrence of scattering. The method of manufacturing the spark plug having a ground electrode to which a bonding surface of a chip is welded, has a machining process of machining the ground electrode such that an area located inside an edge of a welding-planned part where the chip is welded on the ground electrode and including a center of the welding-planned part is rougher than a section except the area of the welding-planned part, and a bonding process of bonding the chip to the welding-planned part of the ground electrode after undergoing the machining process by resistance welding.

A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

The present invention relates to a pattern forming method of a liquid crystal device.