The invention relates to a device (1) for laser cladding, a method (100) for operating such a device, and a component (4′) produced using such a method and/or such a device comprising a laser cladding unit (2) having at least one laser cladding head (3) disposed thereon, one or more material sources (5) for supplying the laser cladding head with a material (M) to be applied, and a laser beam source (6) for supplying the laser cladding head with laser light (L) for carrying out the laser cladding, wherein the device is configured to apply material layers (42, 43, 44) from an adjacent application cladding track (MS) to a surface (41) of a component (4) in the form of at least a first layer (42) made from a material (M) that comprises structures (42s) projecting from the surface of the first layer and having a first hardness (H1), and a second layer (43) applied thereto made from a material (M) having a second hardness (H2) that is less than the first hardness, and the application process is controlled so that the second layer at least partly covers the structures projecting from the first layer.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

The method for treatment of parts, characterized in that it comprises the stages of applying an electrolytic chromium plating layer on a part; applying a coating over the entire outer surface of the part; selective stripping of the coating in order to leave the part with at least one coated portion and at least one uncoated portion; carrying out a selective etching on the layer in at least one part of the uncoated portion; metallization of the entire surface of the part; and removal of the coating.

The disclosure provides methods of preparing pouched products which includes the production of an agglomerated composition situated with a cavity of an outer water-permeable pouch. The pouched agglomerate can be dosed with a given amount of moisture, resulting in at least partial degradation and/or expansion of the agglomerated composition into powdered form. Pouched products prepared according to such methods are also described.

A multilayer printed wiring board and a method of manufacturing the same are provided. A multilayer printed wiring board of the present embodiment includes: a core base material formed by laminating a first wiring layer and a first insulating layer in this order on an insulating substrate; and a built-up layer formed by laminating a second wiring layer and a second insulating layer in this order on the core base material. A primer layer is formed between the second wiring layer and the first insulating layer, the second wiring layer has a lower surface at least part of which is in contact with the primer layer, and the second wiring layer has an upper surface and a side surface on both of which a tin-plated layer and a silane coupling layer are formed in this order.

To realize a laser irradiation apparatus by using which accuracy in processing a substrate can be improved. A laser irradiation apparatus according to an embodiment includes a laser irradiation unit configured to apply laser light to a substrate, a base part, and a conveyance stage configured to convey the substrate. The conveyance stage includes a stage configured to be movable over the base part, a base flange fixed over the stage, a substrate stage fixed to an upper end part of the base flange and configured so that the substrate is placed thereover, and a pusher pin for supporting the substrate, the pusher pin being configured to penetrate the substrate stage and to be movable up and down.

A process for removing a material that is adhered to an underlying surface includes using a laser beam to heat the material to reduce the strength of adhesion between the material and the underlying surface. A stream of gas is directed at the heated material to displace the heated material from the underlying surface.

A process for removing a material that is adhered to an underlying surface includes using a laser beam to heat the material to reduce the strength of adhesion between the material and the underlying surface. A stream of gas is directed at the heated material to displace the heated material from the underlying surface.

Laser cleaning apparatus (100) comprising: a laser system (102) configured to output laser light having a power, a wavelength, a temporal characteristic and a divergence; a delivery cable (106) to deliver the laser light to a cleaning head; a cleaning head (110) comprising: an output aperture and output optics (116) configured to focus the laser light (104) to have a fluence at a focal plane (126) that is greater than an ablation threshold of a surface contaminant to be removed from a surface to be cleaned; scanning apparatus (118) to scan the laser light in at least one dimension across a scan region within the focal plane to cause the scanning laser light to have an effective divergence greater than the divergence of the laser light and to have a corresponding safe working distance from the output aperture determined by the effective divergence, the power, the wavelength and the temporal characteristic; and scan monitoring apparatus (120) to monitor the effective divergence of the scanning laser light and to generate an alarm signal (108) in response to determining that the effective divergence has changed.