A manipulator device such as a robot arm that is capable of increasing manufacturing throughput for additively manufactured parts, and allows for the manipulation of parts that would be difficult or impossible for a human to move is described. The manipulator can grasp various permanent or temporary additively manufactured manipulation points on a part to enable repositioning or maneuvering of the part.

A processing apparatus is equipped with: a first stage system that has a table on which a workpiece is placed and moves the workpiece held by the table; a beam irradiation system that includes a condensing optical system to emit beams; and a controller to control the first stage system and the beam irradiation system, and processing is performed to a target portion of the workpiece while the table and the beams from the condensing optical system are relatively moved, and at least one of an intensity distribution of the beams at a first plane on an exit surface side of the condensing optical system and an intensity distribution of the beams at a second plane whose position in a direction of an optical axis of the condensing optical system is different from the first plane can be changed.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Provided is a laser adjustment method including: a first preparation process of acquiring an image including an image of a first damage formed in a first film due to irradiation of a first film wafer including a first wafer and the first film provided in the first wafer with first laser light as a first damage image; a second preparation process of preparing a second film wafer including a second wafer and a second film provided in the second wafer; a processing process of irradiating the second film wafer with second laser light after the first preparation process and the second preparation process to form a second damage in the second film; an imaging process of imaging the second film to acquire an image including an image of the second damage as a second damage image after the processing process; and an adjustment process of adjusting an aberration.

Provided is a laser adjustment method including: a first preparation process of acquiring an image including an image of a first damage formed in a first film due to irradiation of a first film wafer including a first wafer and the first film provided in the first wafer with first laser light as a first damage image; a second preparation process of preparing a second film wafer including a second wafer and a second film provided in the second wafer; a processing process of irradiating the second film wafer with second laser light after the first preparation process and the second preparation process to form a second damage in the second film; an imaging process of imaging the second film to acquire an image including an image of the second damage as a second damage image after the processing process; and an adjustment process of adjusting an aberration.

A method of producing a glass substrate having a hole is provided. The method includes preparing the glass substrate having a first surface and a second surface facing each other; forming a hole in the glass substrate with a laser; and annealing the glass substrate placed on a first support substrate having a thermal expansion coefficient whose difference from a thermal expansion coefficient of the glass substrate is less than or equal to 1 ppm/K, where the first support substrate is placed on a second support substrate having a thermal expansion coefficient of less than or equal to 10 ppm/K.

The present invention addresses to an adaptation of a laser system in a reactor for the application of laser radiation, promoting the thermal catalysis of the complexation reactions of barium sulfate (BaSO.sub.4), strontium sulfate (SrSO.sub.4) and CaCO.sub.3 with application in fields of drilling and completion of wells, as well as lifting and draining systems; in this case, aiming at the removal of scale at an appropriate temperature for the complexation and consequent dissolution of the scale salt in subsea equipment of the production systems.

The present invention addresses to an adaptation of a laser system in a reactor for the application of laser radiation, promoting the thermal catalysis of the complexation reactions of barium sulfate (BaSO.sub.4), strontium sulfate (SrSO.sub.4) and CaCO.sub.3 with application in fields of drilling and completion of wells, as well as lifting and draining systems; in this case, aiming at the removal of scale at an appropriate temperature for the complexation and consequent dissolution of the scale salt in subsea equipment of the production systems.

An article includes a ceramic material and features a machined surface that is characteristic of cold ablation laser machining, and the machined surface exhibits no visible oxidation. A laser machining apparatus and technique is based on cold-ablation, but is modified or augmented with an inert assist gas to minimize deleterious surface modifications and mitigate oxide formation associated with laser machining.

An article includes a ceramic material and features a machined surface that is characteristic of cold ablation laser machining, and the machined surface exhibits no visible oxidation. A laser machining apparatus and technique is based on cold-ablation, but is modified or augmented with an inert assist gas to minimize deleterious surface modifications and mitigate oxide formation associated with laser machining.