A protective film substance for laser processing includes a solution including a water-soluble resin, an organic solvent, and a light absorbent. The solution has an absorbance, i.e., an absorbance converted for a solution diluted 200 times, equal to 0.05 or more per an optical path length of 1 cm at a wavelength of 532 nm. Alternatively, the protective film substance for laser processing includes a solution including a water-soluble resin, an organic solvent, and a polyhydroxyanthraquinone derivative.

Provided is a forming system that expands and deforms a metal material to perform forming, the forming system including: a forming device that performs the forming; and at least one transport device that transports the metal material, in which the transport device transports the metal material to the forming device in a held state, in a case where a pretreatment device that performs pretreatment for the forming is present, the transport device transports the metal material to the pretreatment device in a held state, and during a period from a transport process in which the metal material is transported to any of devices by the transport device to a treatment process performed by any of the devices, at least one of the transport device and any of the devices continues holding the metal material.

Analyte sensors and methods for fabricating analyte sensors are provided. In an exemplary embodiment, a method for fabricating a planar flexible analyte sensor includes sputtering platinum onto a polyester base layer to form a layer of platinum. The method includes patterning the layer of platinum to form working electrodes and additional electrodes. Further, the method includes forming an insulating dielectric layer over the base layer, wherein the insulating dielectric layer is formed with openings exposing portions of the working electrodes and portions of the additional electrodes. Also, the method includes partially singulating individual sensors from the base layer, wherein each individual sensor is connected to the base layer by a tab. The method further includes depositing an enzyme layer over the exposed portions of the working electrodes and coating the working electrodes with a glucose limiting membrane.

Analyte sensors and methods for fabricating analyte sensors are provided. In an exemplary embodiment, a method for fabricating a planar flexible analyte sensor includes sputtering platinum onto a polyester base layer to form a layer of platinum. The method includes patterning the layer of platinum to form working electrodes and additional electrodes. Further, the method includes forming an insulating dielectric layer over the base layer, wherein the insulating dielectric layer is formed with openings exposing portions of the working electrodes and portions of the additional electrodes. Also, the method includes partially singulating individual sensors from the base layer, wherein each individual sensor is connected to the base layer by a tab. The method further includes depositing an enzyme layer over the exposed portions of the working electrodes and coating the working electrodes with a glucose limiting membrane.

To provide a laser irradiation apparatus which suppresses adhesion of foreign matters to an optical element, a laser irradiation device includes: emission optical systems, which form a beam in which laser light generated by a laser oscillator converges on a predetermined beam spot, and continuously change an irradiation direction or the like of the beam; and a protective member which is arranged between the emission optical system and the beam spot, and protects the emission optical system from foreign matters scattered from an irradiation object side, and the protective member has an aperture through which the beam passes and moves in connection with a change of the irradiation direction or the like of the beam so that the aperture is positioned on a path of the beam.

A method according to one aspect of the present disclosure is a laser marking method for a powder compact containing metal powder, which includes: a first step of scanning with laser light of first power which is weaker over a predetermined area in a surface of the powder compact, to melt and smooth inside of the predetermined area; and a second step of scanning with laser light of second power which is greater, to form a dot formed of a recess of a predetermined depth at a predetermined location in the predetermined area.

A micromachining device that utilizes a solid state laser beam scanner to steer and scan laser beams onto a moveable stage. There are no moving parts as in the galvometric scanner devices in current use. The laser beam scanner has two components, a variable frequency signal generator that is electrically connected to at least one substantially transparent and partially conductive substrate plate (hereinafter plate) with a generally planar face thereon that has a series of quantum dots (of an arbitrary size but narrow size distribution) affixed with the plate, where each of the quantum dots possess an inducible dipole moment, and each of the quantum dots are in electrical contact with the plate, where the quantum dots undergo an excitation and successive recombination (or relaxation) by the input of magnetic, optical or electrical signals.

A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

A method of removing a plurality of portions of a black layer of an electrical conduit for a photovoltaic cell is disclosed. The method includes providing a mandrel having the electrical conduit electroformed in the mandrel. The electrical conduit is formed in a preformed pattern on an outer surface of the mandrel. The electrical conduit has the black layer with a black layer thickness on a side opposite of the outer surface of the mandrel. A beam of a laser is controlled toward the black layer of the electrical conduit. The beam is characterized by laser parameters. The beam of the laser removes the plurality of portions of the black layer on the electrical conduit. Each removed portion of the plurality of portions of the black layer has a thickness equal to the black layer thickness, and a portion area of 5 mm.sup.2 to 20 mm.sup.2.