Patent classifications
B23K26/36
BALANCE ADJUSTMENT METHOD FOR ROTOR AND TURBOCHARGER
A balance adjustment method for a rotor includes an imbalance acquisition step of acquiring imbalance position and amount of the rotor after a first balance correction step of correcting balance of the rotor by cutting a compressor wheel side, an excision target section determination step of determining, based on the imbalance position and amount of the rotor, an excision target range including an imbalance correction position of the turbine wheel and a removal amount in the excision target range, and a second balance correction step of correcting the balance of the rotor by repeatedly irradiating the excision target range determined in the excision target section determination step with laser light from a laser marker device to remove by the removal amount from the turbine wheel.
BALANCE ADJUSTMENT METHOD FOR ROTOR AND TURBOCHARGER
A balance adjustment method for a rotor includes an imbalance acquisition step of acquiring imbalance position and amount of the rotor after a first balance correction step of correcting balance of the rotor by cutting a compressor wheel side, an excision target section determination step of determining, based on the imbalance position and amount of the rotor, an excision target range including an imbalance correction position of the turbine wheel and a removal amount in the excision target range, and a second balance correction step of correcting the balance of the rotor by repeatedly irradiating the excision target range determined in the excision target section determination step with laser light from a laser marker device to remove by the removal amount from the turbine wheel.
METHODS AND SYSTEMS FOR PHOTOPATTERNING AND MINIATURIZATION
Methods and systems for photopatterning and miniaturization. In some examples, a method for patterning a substrate includes irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate. In some examples, a system for patterning a substrate includes an ultraviolet light source, a heater, and a controller configured for irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate.
FIBER-BASED HIGH REPETITION RATE FEMTOSECOND LASER SOURCE AND LASER PROCESSING SYSTEM INCLUDING THE SAME
A femtosecond laser source according to an embodiment of the present invention includes: a pulse generator that converts a continuous wave laser into an optical pulse train; a burst generator that separates the optical pulse train into a plurality of burst pulses; a pulse amplification and spectral broadening unit that expands the spectrum by amplifying a plurality of burst pulses; and a pulse compressor that compresses a plurality of amplified burst pulses to generate a femtosecond laser with a pulse width of 1 picosecond (10.sup.−12 s) or less.
Laser processing system, jet observation apparatus, laser processing method, and jet observation method
A laser processing system that can effectively blow out a material of a workpiece melted by a laser beam by effectively utilizing an assist gas emitted from a nozzle. The laser processing system comprising a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to form a maximum point of velocity of the jet at a position away from the emission opening; a measuring instrument configured to measure a sound generated by the jet impinging on an object; and a position acquisition section configured to acquire information representing the position of the maximum point based on output data of the measuring instrument.
Ultrahigh surface area materials and methods of making same
In one embodiment, a surface has a laser-beam machined area including an array of micro-sized conical pillars that are arranged in orthogonal rows and columns across the surface and that extend upward, the conical pillars defining deep troughs between them that are configured to absorb electrons, electromagnetic radiation, or both, the conical pillars tapering from relatively wide bases to pointed tips, the conical pillars comprising outer surfaces that are covered with a plurality of nanoparticles.
METHODS OF MAKING A CUTTING ELEMENT FOR AN EARTH-BORING TOOL, METHODS OF REPROCESSING CUTTING ELEMENTS, AND ASSOCIATED CUTTING ELEMENTS
A method of making a cutting element for use on an earth-boring tool may include forming the cutting element including a cutting table formed from a superabrasive polycrystalline material. The method may further include polishing a cutting surface of the cutting table by pulsing a laser onto the cutting surface of the cutting table. The cutting element may include a superabrasive polycrystalline cutting table including a cutting surface substantially free of micro-anomalies in the superabrasive material.
METHODS OF MAKING A CUTTING ELEMENT FOR AN EARTH-BORING TOOL, METHODS OF REPROCESSING CUTTING ELEMENTS, AND ASSOCIATED CUTTING ELEMENTS
A method of making a cutting element for use on an earth-boring tool may include forming the cutting element including a cutting table formed from a superabrasive polycrystalline material. The method may further include polishing a cutting surface of the cutting table by pulsing a laser onto the cutting surface of the cutting table. The cutting element may include a superabrasive polycrystalline cutting table including a cutting surface substantially free of micro-anomalies in the superabrasive material.
SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In one embodiment, a semiconductor manufacturing apparatus includes a reformed layer former configured to partially reform a first substrate to form a reformed layer between first and second portions in the first substrate, a peeling layer former configured to form a peeling layer between the second portion and a second substrate provided on the first substrate, and a remover configured to remove the second portion from the second substrate while causing the first portion to remain on the second substrate. The remover includes a heater to heat the first or second portion, to peel the second portion from the second substrate at the peeling layer and divide the first and second portions from each other, and a mover to move the second substrate relative to the second portion, to remove the second portion from the second substrate while causing the first portion to remain on the second substrate.
SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In one embodiment, a semiconductor manufacturing apparatus includes a reformed layer former configured to partially reform a first substrate to form a reformed layer between first and second portions in the first substrate, a peeling layer former configured to form a peeling layer between the second portion and a second substrate provided on the first substrate, and a remover configured to remove the second portion from the second substrate while causing the first portion to remain on the second substrate. The remover includes a heater to heat the first or second portion, to peel the second portion from the second substrate at the peeling layer and divide the first and second portions from each other, and a mover to move the second substrate relative to the second portion, to remove the second portion from the second substrate while causing the first portion to remain on the second substrate.