A laser crystallization apparatus according to an embodiment includes a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident, wherein the optical unit includes a first portion and a second portion bonded to each other on a bonded surface, and a first width of the first portion and a second width of the second portion are the same as each other on the bonded surface based on a direction parallel to the incident direction of the laser beam.

A laser crystallization apparatus according to an embodiment includes a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident, wherein the optical unit includes a first portion and a second portion bonded to each other on a bonded surface, and a first width of the first portion and a second width of the second portion are the same as each other on the bonded surface based on a direction parallel to the incident direction of the laser beam.

A manufacturing method of chips includes forming modified layers that become points of origin of dividing along planned dividing lines, grinding the back surface of the wafer by grinding abrasive stones to thin the wafer into a finished thickness, and dividing the wafer into the chips along the planned dividing lines using the modified layers as the points of origin. The manufacturing method also includes sticking an expanding tape having elasticity to the back surface of the wafer for which grinding processing has been executed, expanding the expanding tape and widening the interval between the respective chips along the planned dividing lines.

A manufacturing method of chips includes forming modified layers that become points of origin of dividing along planned dividing lines, grinding the back surface of the wafer by grinding abrasive stones to thin the wafer into a finished thickness, and dividing the wafer into the chips along the planned dividing lines using the modified layers as the points of origin. The manufacturing method also includes sticking an expanding tape having elasticity to the back surface of the wafer for which grinding processing has been executed, expanding the expanding tape and widening the interval between the respective chips along the planned dividing lines.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

A method of providing a display device includes preparing a display panel including a first area, a bending area extending from the first area, and a second area extending from the bending area, attaching an impact absorbing layer to the display panel, removing a first removal portion of a first release film which overlaps the second area, among portions of the first release film disposed on the impact absorbing layer, and providing a cover tape on a first portion of the impact absorbing layer from which the first removal portion is removed.

A method of providing a display device includes preparing a display panel including a first area, a bending area extending from the first area, and a second area extending from the bending area, attaching an impact absorbing layer to the display panel, removing a first removal portion of a first release film which overlaps the second area, among portions of the first release film disposed on the impact absorbing layer, and providing a cover tape on a first portion of the impact absorbing layer from which the first removal portion is removed.

A processing method of a workpiece with a circular disc shape includes sticking a tape to one surface of the workpiece and integrating the workpiece and a frame through the tape, holding the workpiece by a holding unit with the interposition of the tape, and irradiating the other surface of the workpiece located on the opposite side to the one surface with a pulsed laser beam having such a wavelength as to be absorbed by the workpiece from the side of the other surface. In irradiating the laser beam, the other surface is annularly irradiated with the laser beam in the state in which the orientation of the laser beam is adjusted in such a manner that the laser beam has an angle of incidence formed due to inclination with respect to a normal to the other surface of the workpiece by a predetermined angle.

A processing method of a workpiece with a circular disc shape includes sticking a tape to one surface of the workpiece and integrating the workpiece and a frame through the tape, holding the workpiece by a holding unit with the interposition of the tape, and irradiating the other surface of the workpiece located on the opposite side to the one surface with a pulsed laser beam having such a wavelength as to be absorbed by the workpiece from the side of the other surface. In irradiating the laser beam, the other surface is annularly irradiated with the laser beam in the state in which the orientation of the laser beam is adjusted in such a manner that the laser beam has an angle of incidence formed due to inclination with respect to a normal to the other surface of the workpiece by a predetermined angle.