A laser processing apparatus (1) according to an embodiment includes a processing chamber (18) configured to perform laser processing for an object to be processed (40), a stage (10) disposed inside the processing chamber (18), the stage being configured to convey the object to be processed (40), and a control unit (50) configured to instruct a loading/unloading apparatus (30) about a placement position of the object to be processed (40) over the stage (10), the loading/unloading apparatus (30) being configured to load/unload the object to be processed (40) into/from the processing chamber (18). Further, the processing chamber (18) includes a loading gate (17a) for loading and an unloading gate (17b) for unloading for the object to be processed (40), and the object to be processed (40) is conveyed only in a first direction from the loading gate (17a) toward the unloading gate (17b) over the stage (10).

A laser processing apparatus (1) according to an embodiment includes a processing chamber (18) configured to perform laser processing for an object to be processed (40), a stage (10) disposed inside the processing chamber (18), the stage being configured to convey the object to be processed (40), and a control unit (50) configured to instruct a loading/unloading apparatus (30) about a placement position of the object to be processed (40) over the stage (10), the loading/unloading apparatus (30) being configured to load/unload the object to be processed (40) into/from the processing chamber (18). Further, the processing chamber (18) includes a loading gate (17a) for loading and an unloading gate (17b) for unloading for the object to be processed (40), and the object to be processed (40) is conveyed only in a first direction from the loading gate (17a) toward the unloading gate (17b) over the stage (10).

A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.

A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.

Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.

Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.

A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

In various embodiments, cold-start times and performance of wavelength-beam-combining laser resonators are improved via adjustment of the operating wavelengths and/or temperature of beam emitters within the resonators.

In various embodiments, cold-start times and performance of wavelength-beam-combining laser resonators are improved via adjustment of the operating wavelengths and/or temperature of beam emitters within the resonators.