A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

A glass sheet processing method is provided for irradiating a laser beam on a glass sheet and forming a cleavage in the glass sheet with thermal stress. If each of an irradiation area of the laser beam on the surface and an irradiation area of the laser beam on the back face of the glass sheet includes a peak position of a power density of the laser beam, each irradiation area has an asymmetrical power density distribution that is asymmetrical with respect to a reference line that passes through the peak position and is parallel to a moving direction of the peak position. If each irradiation area has no peak position, each irradiation area has an asymmetrical shape that is asymmetrical with respect to a reference line that passes through a centroid position of the irradiation area and is parallel to a moving direction of the centroid position.

A glass sheet processing method is provided for irradiating a laser beam on a glass sheet and forming a cleavage in the glass sheet with thermal stress. If each of an irradiation area of the laser beam on the surface and an irradiation area of the laser beam on the back face of the glass sheet includes a peak position of a power density of the laser beam, each irradiation area has an asymmetrical power density distribution that is asymmetrical with respect to a reference line that passes through the peak position and is parallel to a moving direction of the peak position. If each irradiation area has no peak position, each irradiation area has an asymmetrical shape that is asymmetrical with respect to a reference line that passes through a centroid position of the irradiation area and is parallel to a moving direction of the centroid position.

A laser processing apparatus and a stack processing apparatus are provided.

The laser processing apparatus includes a laser oscillator and an optical system for forming a linear beam and an x-y- or x- stage. With use of the x-y- or x- stage, the object to be processed can be moved and rotated in the horizontal direction. With this operation, a desired region of the object to be processed can be efficiently irradiated with laser light, and the area occupied by a chamber provided with the x-y- or x- stage can be made small.

A laser processing apparatus and a stack processing apparatus are provided.

The laser processing apparatus includes a laser oscillator and an optical system for forming a linear beam and an x-y- or x- stage. With use of the x-y- or x- stage, the object to be processed can be moved and rotated in the horizontal direction. With this operation, a desired region of the object to be processed can be efficiently irradiated with laser light, and the area occupied by a chamber provided with the x-y- or x- stage can be made small.

A method for repairing a ceramic matrix composite (CMC) article including a ceramic material in a matrix including a metal alloy, wherein a localized region of the metal alloy has a defect. The method includes applying heat to the localized region for a time sufficient to increase the temperature of the metal alloy in the localized region above the melt temperature thereof and cause the metal alloy in the localized region to flow and seal the crack.

A method for repairing a ceramic matrix composite (CMC) article including a ceramic material in a matrix including a metal alloy, wherein a localized region of the metal alloy has a defect. The method includes applying heat to the localized region for a time sufficient to increase the temperature of the metal alloy in the localized region above the melt temperature thereof and cause the metal alloy in the localized region to flow and seal the crack.

A laser irradiation method sets scan lines in an x direction in parallel, and in a y direction to be separate by an inter-scan-line distance Py corresponding to laser irradiation areas of a processing target object, orients a length direction of a linear laser spot with length Wy and width Wx in the y direction, and irradiates target object with the laser spot in each of irradiation positions arranged at width direction intervals while moving the laser spot relative to the target object along the scan lines. The method includes determining the inter-scan-line distance Py, the width direction interval , and a position shift quantity x (where, 0<x<) so that the irradiation positions on adjacent scan lines are shifted in the x direction by the position shift quantity x and a cumulative value of the applied laser intensity is substantially equalized.

A laser irradiation method sets scan lines in an x direction in parallel, and in a y direction to be separate by an inter-scan-line distance Py corresponding to laser irradiation areas of a processing target object, orients a length direction of a linear laser spot with length Wy and width Wx in the y direction, and irradiates target object with the laser spot in each of irradiation positions arranged at width direction intervals while moving the laser spot relative to the target object along the scan lines. The method includes determining the inter-scan-line distance Py, the width direction interval , and a position shift quantity x (where, 0<x<) so that the irradiation positions on adjacent scan lines are shifted in the x direction by the position shift quantity x and a cumulative value of the applied laser intensity is substantially equalized.

A semiconductor device is provided with a semiconductor substrate. A semiconductor element is provided on a first face of the semiconductor substrate. An energy absorbing film is provided on the first face, to absorb optical energy to generate heat. A first insulation film is provided on the semiconductor element and on the energy absorbing film. A second insulation film is provided on a second face of the semiconductor substrate, the second face being opposite to the first face. A first modified layer is provided on a side face of the semiconductor substrate, the side face being located between an outer edge of the first face and an outer edge of the second face. A second modified layer is provided on the side face between the energy absorbing film and the first modified layer. A cleavage face is provided on the side face between the first and second modified layers.