A method of processing a wafer having a plurality of intersecting streets on a face side thereof with protrusions on the streets includes a holding step of holding a protective sheet of a wafer unit on a holding table, an upper surface heightwise position detecting step of detecting a heightwise position of an upper surface of a reverse side of the wafer along the streets, and a laser beam applying step of applying a laser beam having a wavelength transmittable through the wafer to the wafer from the reverse side thereof along the streets while positioning a focused point of the laser beam within the wafer on the basis of the heightwise position, to thereby form modified layers in the wafer along the streets.

A worktable for laser processing includes a lower plate, internal blocks, and external blocks. The lower plate includes a first area, a second area surrounding the first area, and a third area surrounding the second area. The internal blocks are disposed on the lower plate in the first area and the external blocks are disposed on the lower plate in the third area. The external blocks surround the internal blocks.

A worktable for laser processing includes a lower plate, internal blocks, and external blocks. The lower plate includes a first area, a second area surrounding the first area, and a third area surrounding the second area. The internal blocks are disposed on the lower plate in the first area and the external blocks are disposed on the lower plate in the third area. The external blocks surround the internal blocks.

A carrier substrate includes a base layer, an antireflection layer, and an energy absorption layer, wherein the antireflection layer is formed on one surface of the base layer and allows an elastic wave generated by a first laser beam transmitted through an element adhesively bonded to the antireflection layer to be transmitted through the base layer without being reflected towards the element, the first laser beam being applied to the element through a source substrate of the element, and the energy absorption layer is formed between the base layer and the antireflection layer to be aligned with the element, and evaporates upon energy absorption.

A carrier substrate includes a base layer, an antireflection layer, and an energy absorption layer, wherein the antireflection layer is formed on one surface of the base layer and allows an elastic wave generated by a first laser beam transmitted through an element adhesively bonded to the antireflection layer to be transmitted through the base layer without being reflected towards the element, the first laser beam being applied to the element through a source substrate of the element, and the energy absorption layer is formed between the base layer and the antireflection layer to be aligned with the element, and evaporates upon energy absorption.

Polymeric composite stents reinforced with fibers for implantation into a bodily lumen are disclosed.

Polymeric composite stents reinforced with fibers for implantation into a bodily lumen are disclosed.

A wafer dividing method includes forming modified layers which will be starting points of division, integrally attaching an annular frame and the wafer together through a dicing tape, directing the wafer downward and expanding the dicing tape to divide, into individual device chips, the wafer along the modified layers formed along the streets, counting particles scattered at the time of division of the wafer by a particle counter disposed in a dust collection path set directly below the wafer, and determining, on the basis of the number of the particles, whether or not the modified layers have been properly formed, at the time of carrying out the dividing step.

A wafer dividing method includes forming modified layers which will be starting points of division, integrally attaching an annular frame and the wafer together through a dicing tape, directing the wafer downward and expanding the dicing tape to divide, into individual device chips, the wafer along the modified layers formed along the streets, counting particles scattered at the time of division of the wafer by a particle counter disposed in a dust collection path set directly below the wafer, and determining, on the basis of the number of the particles, whether or not the modified layers have been properly formed, at the time of carrying out the dividing step.

An electrode welding method includes a laser irradiation apparatus preparation step of preparing a laser irradiation apparatus including a laser oscillator that emits a laser beam with a wavelength having absorbability with respect to a semiconductor chip and a spatial light modulator that adjusts the energy distribution of the laser beam emitted by the laser oscillator, an electrode positioning step of positioning, corresponding to electrodes of a wiring substrate, bump electrodes of a device, and an electrode welding step of irradiating the back surface of the semiconductor chip with the laser beam and welding the bump electrodes to the electrodes of the wiring substrate.