This sintered porous silver film is obtained by sintering silver particles, wherein a crystallite size is 60 nm to 150 nm, a ratio of a detected amount of C.sub.3H.sub.7.sup.+ ions to a detected amount of Ag.sup.+ ions which are measured by time-of-flight secondary ion mass spectrometry is 0.10 to 0.35, and a ratio of a detected amount of C.sub.2H.sup. ions to the detected amount of Ag.sup. ions which are measured by time-of-flight secondary ion mass spectrometry is 0.9 to 3.7.

The disclosure describes a tempered vacuum glass, which comprises: at least two glass sheets arranged parallel to each other; surrounding edges of adjacent glass sheets being sealed using an edge sealing structure; and support members placed in an array between the adjacent glass sheets to form a vacuum space. The edge sealing structure is a metallic edge-sealing structure. The structure comprises a first transition layer, a first metallized layer, a first intermetallic compound layer, a solder layer, a second intermetallic compound layer, a second metallized layer, and a second transition layer stacked in that order. The first and second metallized layers are in a spongy skeleton structure formed by sintering a metal paste. The first and second transition layers are formed by sintering the metal paste on the adjacent glass sheets, and contain a glass phase layer including metallic particles and a metal oxide layer with a net structure.

A method of forming a diffusion bonded joint comprises the steps of: providing a first component having a first faying surface; providing a second component having a second faying surface; applying a lamellar coating to at least one of the first faying surface and the second faying surface; and bringing the first and second faying surfaces into contact in a diffusion bonding operation to form the diffusion bonded joint.

A method for reversibly attaching a phase changing metal to an object, the method comprising the steps of: providing a substrate having at least one surface at which the phase changing metal is attached, heating the phase changing metal above a phase changing temperature at which the phase changing metal changes its phase from solid to liquid, bringing the phase changing metal, when the phase changing metal is in the liquid phase or before the phase changing metal is brought into the liquid phase, into contact with the object, permitting the phase changing metal to cool below the phase changing temperature, whereby the phase changing metal becomes solid and the object and the phase changing metal become attached to each other, reheating the phase changing metal above the phase changing temperature to liquefy the phase changing metal, and
removing the substrate from the object, with the phase changing metal separating from the object and remaining with the substrate.

An interface layer includes an electrically conductive compressible mesh that has wires that are interwoven and pores between the wires. A sinter paste is immobilized in the pores. The sinter paste includes electrically conductive particles.

Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.

A solder alloy includes Sn, optional Ag, Cu, and Al wherein the solder alloy composition together with the solder alloy superheat temperature and rapid cooling rate from the superheat temperature are controlled to provide a dispersion of fine hard CuAl intermetallic particles in an as-solidified solder alloy microstructure wherein the particles are retained even after multiple solder reflow cycles often used in modern electronic assembly procedures to provide a particle strengthening to the solder joint microstructure as well as exert a grain refining effect on the solder joint microstructure, providing a strong, impact- and thermal aging-resistant solder joint that has beneficial microstructural features and is substantially devoid of Ag.sub.3Sn blades.

Disclosed herein is an article comprising a first metal layer; a second metal layer that is chemically different from the first metal layer; and a third metal layer disposed between the first metal layer and the second metal layer and contacting both the first metal layer and the second metal layer; where the third metal layer is chemically similar to either the first metal layer or the second metal layer; where at least two metal layers that are chemically similar are welded together through a clearance opening located in a metal layer that is not chemically similar to the at least two metal layers.

An electronic part mounting substrate includes: a metal plate 10 (for mounting thereon electronic parts) of aluminum or an aluminum alloy having a substantially rectangular planar shape, one major surface of the metal plate 10 being surface-processed so as to have a surface roughness of not less than 0.2 micrometers; a plating film 20 of nickel or a nickel alloy formed on the one major surface of the metal plate 10; an electronic part 14 bonded to the plating film 20 by a silver bonding layer 12 (containing a sintered body of silver); a ceramic substrate having a substantially rectangular planar shape, one major surface of the ceramic substrate 16 being bonded to the other major surface of the metal plate 10; and a radiating metal plate (metal base plate) 18 bonded to the other major surface of the ceramic substrate 16.

A solder material capable of suppressing the occurrence of electromigration is provided.

The solder material is core ball 1A which comprises spherical core 2A composed of Cu or a Cu alloy, and solder layer 3A coating core 2A, and wherein solder layer 3A has:

a Cu content of 0.1 mass % or more and 3.0 mass % or less,

a Bi content of 0.5 mass % or more and 5.0 mass % or less,

a Ag content of 0 mass % or more and 4.5 mass % or less, and

a Ni content of 0 mass % or more and 0.1 mass % or less,

with Sn being the balance.