The present invention introduces a scanning arrangement and a method suitable for coating processes applying laser ablation. The arrangement is suited to prolonged, industrial processes. The arrangement comprises a target, which has an annular form. The laser beam direction is controlled by a rotating mirror locating along the center axis of the annular target. The scanning line will rotate circularly along the inner target surface when the mirror rotates. The focal point of the laser beams may be arranged to locate on the inner target surface to ensure a constant spot size. A ring-formed, a cylinder-shaped or a cut conical-shaped target may be used. The inner surface of the target may thus be tapered in order to control the release direction of the ablated material towards a substrate to be coated.

Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate to form a via in the substrate, wherein the via extends through the thickness T of the substrate while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching and upon removal of the mask the first surface of the substrate has a surface roughness (Rq) of about less than 1.0 nm.

A separation method allows a carrier substrate and a resin layer to be separated without, for example, breaking the resin layer for use in a final product, such that the resin layer can be rendered easy to handle thereafter. A protection step coats the surface of a resin layer with a protective film. A holding-by-suction step retains by suction the coated resin layer on a suction stage with a flat suction surface. After the back surface of the carrier substrate is supported at or near a first end by a support roller capable of moving from the first end to a second end of the carrier substrate, a peeling step lowers the first end of the carrier substrate while moving the support roller toward the second end, thereby peeling the carrier substrate from the resin layer while bending the carrier substrate at a portion supported by the support roller.

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

A method and system to manufacture workpieces employing a high intensity energy source to create a puddle and at least one resistively heated wire which is heated to at or near its melting temperature and deposited into the puddle as droplets.

A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

A laser processing apparatus for producing a GaN wafer from a GaN ingot includes a laser beam irradiating unit configured to apply a laser beam having a wavelength capable of passing through the GaN ingot held by a chuck table. The laser beam irradiating unit includes a laser oscillator configured to oscillate the laser beam. The laser oscillator includes a seeder configured to oscillate a high-frequency pulsed laser, a thinning-out unit configured to thin out high-frequency pulses oscillated by the seeder at a predetermined repetition frequency, and generate one burst pulse with a plurality of high-frequency pulses as sub-pulses, and an amplifier configured to amplify the generated burst pulse.

Methods and apparatus for separating substrates are disclosed, as are articles formed from the separated substrates. A method of separating a substrate having first and second surfaces includes directing a beam of laser light to pass through the first surface and, thereafter, to pass through the second surface. The beam of laser light has a beam waist located at a surface of the substrate or outside the substrate. Relative motion between the beam of laser light and the substrate is caused to scan a spot on a surface of the substrate to be scanned along a guide path. Portions of the substrate illuminated within the spot absorb light within the beam of laser light so that the substrate can be separated along the guide path.

An epitaxially grown III-V layer is separated from the growth substrate. The III-V layer can be an inverted lattice matched (ILM) or inverted metamorphic (IMM) solar cell, or a light emitting diode (LED). A sacrificial epitaxial layer is embedded between the GaAs wafer and the III-V layer. The sacrificial layer is damaged by absorbing IR laser radiation. A laser is chosen with the right wavelength, pulse width and power. The radiation is not absorbed by either the GaAs wafer or the III-V layer. No expensive ion implantation or lateral chemical etching of a sacrificial layer is needed. The III-V layer is detached from the growth wafer by propagating a crack through the damaged layer. The active layer is transferred wafer-scale to inexpensive, flexible, organic substrate. The process allows re-using of the wafer to grow new III-V layers, resulting in savings in raw materials and grinding and etching costs.

A method and an apparatus of a powder bed fusion additive manufacturing system that enables a quick change in the optical beam delivery size and intensity across locations of a print surface for different powdered materials while ensuring high availability of the system. A dynamic optical assembly containing a set of lens assemblies of different magnification ratios and a mechanical assembly may change the magnification ratios as needed. The dynamic optical assembly may include a transitional and rotational position control of the optics to minimize variations of the optical beam sizes across the print surface.