Patent classifications
B23K2103/50
HIGH VOLUME MANUFACTURING OF ALLOY ANODES FOR LI-ION BATTERY
Embodiments of the present disclosure generally relate to flexible substrate fabrication. In particular, embodiments described herein relate to methods for flexible substrate fabrication which can be used to improve the life of lithium-ion batteries. In one or more embodiments, a method of fabricating alloy anodes includes forming an alloy anode using a planar flow melt spinning process including solidifying a molten material over a quenching surface of a rotating casting drum and performing a pre-lithiation surface treatment on the alloy anode.
Bicycle wheel component with braking area made of composite material and related manufacturing process
A process for manufacturing a bicycle wheel component, comprising the steps of providing a component having at least one braking area that cooperates with a braking body made by molding of composite material having structural fibers in a polymeric material, and post-molding machining of at least one region of the braking area by removing only polymeric material, without removal of the structural fiber, from the entire region so that the structural fiber outcrops at least in part from the polymeric material, and removing the structural fiber and possibly the polymeric material according to at least one groove within the region. A bicycle wheel component having a braking area of composite material, wherein in a region of the braking area, the structural fiber outcrops at least from the polymeric material, and the region comprises a groove through the structural fiber and possibly the polymeric material of the composite material.
Method for making infrared light absorber
A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.
High power laser tunneling mining and construction equipment and methods of use
There are provided high power laser and laser mechanical earth removing equipment, and operations using laser cutting tools having stand off distances. These equipment provide high power laser beams, greater than 1 kW to cut and volumetrically remove targeted materials and to remove laser affected material with gravity assistance, mechanical cutters, fluid jets, scrapers and wheels. There is also provided a method of using this equipment in mining, road resurfacing and other earth removing or working activities.
Laser welding utilizing broadband pulsed laser sources
Method and system for a laser welding process employing the use of a single pulsed fiber laser source configured to generate a radiative output with a wavelength spectrum extending from about 1.8 microns to about 2.6 microns. In a specific case, the laser output from the single pulsed fiber laser source is focused onto the interface of the two pieces of materials at least one of which includes any of glasses, inorganic crystals, and semiconductors.
THREE-DIMENSIONAL PRINTING
The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.
Room temperature glass-to-glass, glass-to-plastic and glass-to-ceramic/semiconductor bonding
A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.
Manufacturing method for printed circuit board and laser processing machine
A manufacturing method for a printed circuit board includes: passing a first laser beam output from a laser output device through a first aperture so as to define an outer diameter of the first laser beam, positioning the first laser beam by an optical axis positioning device including a galvano device and an fθ lens, and irradiating the printed circuit board with the first laser beam such that a through-hole is formed in a copper layer; and passing a second laser beam output from the laser output device through a second aperture so as to define an outer diameter of the second laser beam whereby a diameter of the second aperture is smaller than a diameter of the first aperture, positioning the second laser beam by the optical axis positioning device, and irradiating the printed circuit board with the second laser beam such that an insulating layer is processed.
LASER BLAST SHIELD
A laser blast shield for preventing damage to a first wall of a workpiece opposite a second wall being cut by a laser includes a metal substrate having a micro-textured topology and a highly reflective and thermally conductive metal coating deposited over the micro-textured surface to facilitate spreading of residual laser energy penetrating the second surface and absorption of the laser energy throughout the body of the blast shield.
Method of manufacturing light emitting element
A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO.sub.2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.