Disclosed is a device and a method for manufacturing semiconductor crystal wafer, with the device and the method being capable of easily and reliably manufacture semiconductor crystal wafers of high-quality. This manufacturing method for a SiC wafer, being a semiconductor crystal wafer, includes: a pad groove formation step and a bobbin groove formation step prior to a groove machining step, and after the groove machining step, a polishing step, a cutting step, a first surface machining step, and a second surface machining step.

Disclosed is a device and a method for manufacturing semiconductor crystal wafer, with the device and the method being capable of easily and reliably manufacture semiconductor crystal wafers of high-quality. This manufacturing method for a SiC wafer, being a semiconductor crystal wafer, includes: a pad groove formation step and a bobbin groove formation step prior to a groove machining step, and after the groove machining step, a polishing step, a cutting step, a first surface machining step, and a second surface machining step.

A processing method for a boule includes the following steps. The boule is moved to a first processing station of a grinding equipment, and a first grinding wheel located within the first processing station is utilized to perform a sidewall grinding process on a sidewall of the boule. During the sidewall grinding process, the boule rotates along a first rotational axis, and the first grinding wheel rotates along a second rotational axis, wherein the first rotational axis is parallel to the second rotational axis. The boule is moved to a second processing station of the grinding equipment, and a second grinding wheel located within the second processing station is utilized to perform a top surface grinding process on a top surface of the boule.

A processing method for a boule includes the following steps. The boule is moved to a first processing station of a grinding equipment, and a first grinding wheel located within the first processing station is utilized to perform a sidewall grinding process on a sidewall of the boule. During the sidewall grinding process, the boule rotates along a first rotational axis, and the first grinding wheel rotates along a second rotational axis, wherein the first rotational axis is parallel to the second rotational axis. The boule is moved to a second processing station of the grinding equipment, and a second grinding wheel located within the second processing station is utilized to perform a top surface grinding process on a top surface of the boule.

A silicon carbide crystal boule includes a flat surface, a truncated cone surface, and an annular curved surface. The annular curved surface connects the flat surface and the truncated cone surface. A width of the silicon carbide crystal boule gradually decreases from a first end of the truncated cone surface connecting the annular curved surface to a second end opposite to the first end.

A silicon carbide wafer having a seed end and a dome end opposite to the seed end. In the silicon carbide wafer, a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cm.sup.2 at both the seed end and the dome end, and a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cm.sup.2 at both the seed end and the dome end.

A silicon carbide seed is provided, including a first seed layer and a second seed layer. The first seed layer includes a polycrystalline silicon carbide material. The second seed layer is directly attached to the first seed layer, where the second seed layer includes a single crystal silicon carbide material, and a thickness ratio (T2/T1) of a thickness T1 of the first seed layer to a thickness T2 of the second seed layer is in a range of 10% to 50%.

A semiconductor processing method includes the following steps. A semiconductor ingot is cut to obtain a semiconductor wafer, in which the semiconductor wafer includes a first side and a second side opposite to the first side. A double-sided grinding process is performed to simultaneously grind the first side and the second side of the semiconductor wafer using diamond grinding fluid. The diamond grinding fluid contains diamond particles with a median particle diameter of 0.1 m to 3 m.

A silicon carbide wafer having a seed end and a dome end opposite to the seed end. In the silicon carbide wafer, a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cm.sup.2 at both the seed end and the dome end, and a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cm.sup.2 at both the seed end and the dome end.

A silicon carbide wafer having a seed end and a dome end opposite to the seed end. In the silicon carbide wafer, a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cm.sup.2 at both the seed end and the dome end, and a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cm.sup.2 at both the seed end and the dome end.