A substrate processing method includes measuring a first thickness distribution of a first substrate in a first one of multiple combined substrates before being subjected to a finishing grinding; measuring a second thickness distribution of the first substrate in a second one of the multiple combined substrates before being subjected to the finishing grinding; deciding a relative inclination between a substrate holder configured to hold the second one of the multiple combined substrates and a grinder configured to perform the finishing grinding on the corresponding combined substrate, based on first difference data between the first thickness distribution and the second thickness distribution; and performing finishing grinding on the first substrate in the second one of the multiple combined substrates while holding the second one of the multiple combined substrates at the inclination which is decided.

A rotation controlling section of a control unit calculates a maximum thicknesswise difference in a wafer by using a noncontact thickness measuring instrument, and if the maximum thicknesswise difference exceeds a tolerance, relatively changes a rotational speed of a chuck table relative to a rotational speed of a spindle. This can shift a rotational speed ratio, which is a ratio between the rotational speed of the spindle and the rotational speed of the chuck table, from an integer. Therefore, the maximum thicknesswise difference can be made small through spark-out processing. As a result, cyclic variations in thickness value of the wafer are reduced, enabling planarization of a ground surface of the wafer.

A rotation controlling section of a control unit calculates a maximum thicknesswise difference in a wafer by using a noncontact thickness measuring instrument, and if the maximum thicknesswise difference exceeds a tolerance, relatively changes a rotational speed of a chuck table relative to a rotational speed of a spindle. This can shift a rotational speed ratio, which is a ratio between the rotational speed of the spindle and the rotational speed of the chuck table, from an integer. Therefore, the maximum thicknesswise difference can be made small through spark-out processing. As a result, cyclic variations in thickness value of the wafer are reduced, enabling planarization of a ground surface of the wafer.

A component according to the disclosure may include a body having an aperture therein for receiving one of a turbomachine shaft or a lathe chuck, wherein in response to the body being coupled to the lathe chuck, the aperture is oriented substantially axially relative to an axis of rotation of the body with the lathe chuck; and a flange coupled to and in direct axial contact with the body, the flange including a surface that extends axially relative to the axis of rotation of the body, wherein the surface of the flange comprises a matingly engageable face configured to contact an axially aligned surface during operation of the component and having a sanding indentation thereon, wherein a surface roughness of the surface of the flange is less than a surface roughness of a remainder of the component.

A component according to the disclosure may include a body having an aperture therein for receiving one of a turbomachine shaft or a lathe chuck, wherein in response to the body being coupled to the lathe chuck, the aperture is oriented substantially axially relative to an axis of rotation of the body with the lathe chuck; and a flange coupled to and in direct axial contact with the body, the flange including a surface that extends axially relative to the axis of rotation of the body, wherein the surface of the flange comprises a matingly engageable face configured to contact an axially aligned surface during operation of the component and having a sanding indentation thereon, wherein a surface roughness of the surface of the flange is less than a surface roughness of a remainder of the component.

A workpiece has a device area and a peripheral area surrounding the device area on a front surface side thereof. A workpiece grinding method includes a groove forming step of performing grinding feed of a grinding unit while a spindle is rotated, and grinding a predetermined area on a back surface side of the workpiece, the predetermined area corresponding to the device area, in a state in which a chuck table holding the workpiece is not rotated, thereby forming a groove on the back surface side, a groove removing step of starting rotation of the chuck table while the spindle is kept rotating, thereby grinding side walls of the groove and removing the groove, and a recess forming step of performing grinding feed of the grinding unit while the spindle and the chuck table are rotated, thereby grinding the predetermined area and forming a recess and a ring-shaped reinforcement part.

A workpiece has a device area and a peripheral area surrounding the device area on a front surface side thereof. A workpiece grinding method includes a groove forming step of performing grinding feed of a grinding unit while a spindle is rotated, and grinding a predetermined area on a back surface side of the workpiece, the predetermined area corresponding to the device area, in a state in which a chuck table holding the workpiece is not rotated, thereby forming a groove on the back surface side, a groove removing step of starting rotation of the chuck table while the spindle is kept rotating, thereby grinding side walls of the groove and removing the groove, and a recess forming step of performing grinding feed of the grinding unit while the spindle and the chuck table are rotated, thereby grinding the predetermined area and forming a recess and a ring-shaped reinforcement part.

A probe grinding device by acoustic positioning includes a fixing base, a grinding base, a rotating module, a motor module, a moving module, a processing module, an acoustic sensing module, and a memory module. The fixing base fixes a probe card. The acoustic sensing module generates and transmits an acoustic sensing signal to the processing module. The memory module stores a grinding audio of a grinding audio data. When the processing module drives the rotating module and the moving module via the motor module, the processing module determines whether the acoustic sensing signal matches the grinding audio. When the acoustic sensing signal matches the grinding audio, the processing module drives the moving module to slowly move the grinding base to avoid damaging the probes.

A probe grinding device by acoustic positioning includes a fixing base, a grinding base, a rotating module, a motor module, a moving module, a processing module, an acoustic sensing module, and a memory module. The fixing base fixes a probe card. The acoustic sensing module generates and transmits an acoustic sensing signal to the processing module. The memory module stores a grinding audio of a grinding audio data. When the processing module drives the rotating module and the moving module via the motor module, the processing module determines whether the acoustic sensing signal matches the grinding audio. When the acoustic sensing signal matches the grinding audio, the processing module drives the moving module to slowly move the grinding base to avoid damaging the probes.

Provided is a substrate grinding device including: a work table; a first grinding wheel; and a second grinding wheel, wherein the work table is configured to rotate while sucking and holding a substrate, the first grinding wheel and the second grinding wheel are cup wheel type wheels, and provided at positions where the first grinding wheel and the second grinding wheel can be simultaneously in contact with the substrate rotating, the first grinding wheel and the second grinding wheel being configured to grind the substrate rotating, while rotating, and the work table is configured to be able to move a rotation center of the substrate from a first grinding position within a grinding range of the first grinding wheel to a second grinding position within a grinding range of the second grinding wheel.