The present invention discloses a device (100) for abrading or removing material from a joint or groove by means of at least one abrasive area (30) provided at a rib (20) associated with a main body (10).

The present invention discloses a device (100) for abrading or removing material from a joint or groove by means of at least one abrasive area (30) provided at a rib (20) associated with a main body (10).

Disclosed herein are a metal plate including a plurality of pattern portions, a patterning apparatus configured to form a plurality of patterns on the metal plate, and a patterning method using the same. The metal plate to be used in a household appliance includes a plurality of pattern portions in which a hairline pattern is formed on a surface of the metal plate, wherein the plurality of pattern portions includes a first pattern portion having a first hairline pattern and a second pattern portion having a second hairline pattern different from the first hairline pattern.

A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

A plurality of interposers are made from a material substrate. The material substrate includes a glass substrate partitioned by a plurality of crossing division lines to define a plurality of separate regions. A multilayer member is provided on a first surface or a second surface opposite to the first surface of the glass substrate and has an insulating layer and a wiring layer. An exposed surface of the multilayer member is cut along each division line by using a first cutting blade to form a cut groove on the exposed surface of the multilayer member, the cut groove having a depth not reaching the glass substrate. The glass substrate is cut along each cut groove by using a second cutting blade having a thickness smaller than the width of each cut groove to thereby divide the glass substrate and manufacture the plural interposers.

A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

A method for machining a material, in particular steel, is provided. The material is milled at such a high cutting speed that residual tensile stresses close the surface that exceed a specified value can occur and the residual tensile stresses can be lowered below the specified value by subsequent brushing. A device for performing the method is also provided.

A method for machining a material, in particular steel, is provided. The material is milled at such a high cutting speed that residual tensile stresses close the surface that exceed a specified value can occur and the residual tensile stresses can be lowered below the specified value by subsequent brushing. A device for performing the method is also provided.