In certain embodiments, a system is provided for the efficient removal of an old grip from a fishing pole while maintaining the integrity of the pole. The system can include a removal portion including one or more rotational assemblies that rotate one or more grinding members. The grinding members can include a rotational blade with a centering rod. The rotational assembly can remove the old grip while maintaining the integrity of the rod within. The system can include multiple sets of grinding members that are organized for efficient identification or may include adjustable grinding members that can be configured for specific rods. The system can further include a guide to help identify particular grinding members for use with particular fishing poles.

In certain embodiments, a system is provided for the efficient removal of an old grip from a fishing pole while maintaining the integrity of the pole. The system can include a removal portion including one or more rotational assemblies that rotate one or more grinding members. The grinding members can include a rotational blade with a centering rod. The rotational assembly can remove the old grip while maintaining the integrity of the rod within. The system can include multiple sets of grinding members that are organized for efficient identification or may include adjustable grinding members that can be configured for specific rods. The system can further include a guide to help identify particular grinding members for use with particular fishing poles.

A SiC wafer is processed by a laser beam having a wavelength that transmits SiC to form a peeling plane in a region of the wafer which corresponds to a device area of a first surface of the wafer. A plurality of devices demarcated by a plurality of intersecting projected dicing lines in the device area are formed on the first surface. An annular groove is formed on a second surface of the wafer which is opposite the first surface, in a boundary region of the wafer between the device area and an outer peripheral excessive area surrounding the device area. A portion of the wafer which is positioned radially inwardly of the annular groove is peeled from the peeling plane, thereby thinning the device area and forming an annular stiffener area on a region of the second surface which corresponds to the outer peripheral excessive area.

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces.

Various aspects of an apparatus are disclosed. In a particular aspect, an apparatus comprising a cylindrical filter, a filter cleaning knob, and a filter cleaning flap is disclosed. Within such embodiment, the filter cleaning knob is configured to rotate the cylindrical filter. The filter cleaning flap is coupled to the cylindrical filter and configured to sequentially make contact with a plurality of pleated segments of the cylindrical filter as the filter cleaning knob is rotated.

A method is disclosed for slicing an ingot by which wire rows are formed by using a wire that is spirally wound between a plurality of wire guides and travels in an axial direction. An ingot is pressed against the wire rows while supplying a working fluid to a contact portion of the ingot and the wire, thereby slicing the ingot into wafers, and a ratio of a wire new line feed amount per unit time in slicing of a slicing start portion of a first ingot to that in slicing of a centration portion of the same at the time of slicing the ingot after replacement of the wire is controlled to be ½ or less of the ratio at the time of slicing second and subsequent ingots after the replacement of the wire.

A damped abrasive cutter having a machine attaching end; an abrasive surface comprising abrasive particles disposed in a binder; a central damping body connecting the machine attaching end to the abrasive surface. The central damping body formed from a synthetic polymer having a Storage Modulus from 1000 MPa to 2500 MPa and a Loss Factor from 0.025 to 0.10.

A cutting apparatus includes a chuck table configured to hold the workpiece, and a cutting unit fitted with a cutting blade including an annular base and a cutting edge that includes abrasive grains and a binder configured to fix the abrasive grains, and is formed along an outer circumferential edge of the base. The cutting unit includes a spindle, a blade mount fitted to a distal end portion of the spindle, and a fixing nut configured to fix the cutting blade to the blade mount, and the blade mount or the fixing nut is provided with a corrosion layer formed of a material having a higher ionization tendency than a material constituting the binder.

A cutting apparatus includes a chuck table configured to hold the workpiece, and a cutting unit fitted with a cutting blade including an annular base and a cutting edge that includes abrasive grains and a binder configured to fix the abrasive grains, and is formed along an outer circumferential edge of the base. The cutting unit includes a spindle, a blade mount fitted to a distal end portion of the spindle, and a fixing nut configured to fix the cutting blade to the blade mount, and the blade mount or the fixing nut is provided with a corrosion layer formed of a material having a higher ionization tendency than a material constituting the binder.

Provided are abrasive grains, an evaluation method and a wafer manufacturing method. A predetermined amount of abrasive grains is prepared as an abrasive grain sample group, the grain diameter of individual abrasive grains in the abrasive grain sample group is measured, the number of abrasive grains in the abrasive grain sample group as a whole is counted, abrasive grains having a grain diameter equal to or smaller than a predetermined reference grain e diameter criterion which is smaller than the average grain diameter of the abrasive grain sample are defined as small grains and the number of the small grains is counted, a small grain ratio is calculated as the number ratio of the small grains occupied in the abrasive grain sample group as a whole, and a determination is made as to whether or not the small grain ratio is equal to or smaller than a predetermined threshold value.