The present disclosure discloses a device for cutting connection of multi-piece module electrode which includes a stand, the stand is provided with a workbench and the workbench is connected with a height adjusting device. The device further includes an angle grinding device, the angle grinding device includes a polishing shaft and an angle grinder, the angle grinder is arranged on the polishing shaft, and the angle grinding device is provided with a saw blade. According to the characteristics of the module electrode, the angle grinding device is matched with the workbench to implement simultaneous electrode disconnecting operation of multiple electrodes of the module, so that the device not only has higher efficiency and better cutting effect, but also is suitable for universal saw blades, saves the cost, and is safer.

A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around a plurality of grooved rollers, the wire being fed from one of a pair of wire reels and taken up by another, the method including feeding a workpiece to the row for slicing while allowing the wire to reciprocate and travel in an axial direction, thereby slicing the workpiece at a plurality of positions aligned in an axial direction of the workpiece simultaneously. Prior to slicing, an abrasive-grain abrading step wherein the wire is allowed to travel without slicing the workpiece, allowing the wire to rub against itself within the reels, and dressing its surface for 30 minutes or more. The method can dress a fixed abrasive grain wire at low cost and suppress thickness unevenness of wafers.

A cutting apparatus is provided with a cutting unit. The cutting unit includes a spindle on which a cutting blade is mounted for rotation, a spindle housing that rotatably supports the spindle, a blade cover that is attached to the spindle housing and covers the cutting blade, a cutting water supply nozzle that supplies cutting water to the cutting blade, and a blade monitor that has an end face configured to monitor a cutting edge of the cutting blade. The end face of the blade monitor has a recessed portion to which rinsing water is supplied to rinse the end face.

Provided is a method for preventing metal contamination during cutting of a polycrystalline silicon rod. A method for cutting a polycrystalline silicon rod (S) includes the step of cutting the polycrystalline silicon rod (S) by using a cutting tool (133). The step of cutting includes: delivering a liquid (L1) to a cutting position of the polycrystalline silicon rod (S) through a first nozzle (14); and delivering a liquid (L2) to a surface of the polycrystalline silicon rod (S) through a second nozzle (15).

A sintered magnet sawing apparatus is provided comprising a cylindrical work carrier mounted on a horizontal rotating spindle and having a regular polygonal shape in a perpendicular cross section, and a plurality of endless elastic belts adapted to force a work of sintered magnet against the carrier surface to secure the work thereto and adapted to travel synchronously with and counter to the rotation of the carrier in a circulatory manner. In accordance with rotation of the carrier, the work is delivered to the peripheral surface of the carrier, secured thereto by the elastic belts, moved further forward and cutoff machined by an outer cutoff blade. The divided work is moved further forward, released and discharged from the carrier.

In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

The cutting method is a cutting method for cutting a workpiece using a wire tool, including: supplying a slurry containing abrasive grains having an electrical dielectric property to a region of the workpiece into which the wire tool cuts; generating an alternating electric field in a region between the wire tool and the workpiece; and running the wire tool along a direction in which the wire tool is drawn while the wire tool abuts on the workpiece.

A solar cell includes a semiconductor substrate having a photoelectric conversion section, a first electrode, and a second electrode. The semiconductor substrate has a thickness of 70 μm or more and 200 μm or less. A chipping mark is present on an edge of at least one principal surface of the semiconductor substrate. The maximum length of the chipping mark along a side of the semiconductor substrate is 45 μm or less. The semiconductor substrate does not have a scribe mark due to laser irradiation. The solar cell can suppress a reduction in the fill factor.