A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Included are a polishing table provided with an eddy current sensor, the polishing table configured to rotate; a polishing head configured to face the polishing table, the polishing head configured to rotate, the polishing head having a surface which faces the polishing table and to which a substrate is configured to be attached; and a processor configured to generate preprocessed data on a target substrate by executing predetermined preprocessing on an output signal when the eddy current sensor is at each position facing a target substrate during polishing processing of a target substrate to determine a metal line height at at least one position of the target substrate by inputting preprocessed data on the target substrate to a learned machine learning model using a learning data set in which data after predetermined preprocessing is executed on an output signal when the eddy current sensor is at each position facing a substrate is set as an input and a metal line height at at least one position of the substrate is set as an output.

Included are a polishing table provided with an eddy current sensor, the polishing table configured to rotate; a polishing head configured to face the polishing table, the polishing head configured to rotate, the polishing head having a surface which faces the polishing table and to which a substrate is configured to be attached; and a processor configured to generate preprocessed data on a target substrate by executing predetermined preprocessing on an output signal when the eddy current sensor is at each position facing a target substrate during polishing processing of a target substrate to determine a metal line height at at least one position of the target substrate by inputting preprocessed data on the target substrate to a learned machine learning model using a learning data set in which data after predetermined preprocessing is executed on an output signal when the eddy current sensor is at each position facing a substrate is set as an input and a metal line height at at least one position of the substrate is set as an output.

A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

Various embodiments of the present disclosure are directed towards a chemical mechanical polishing (CMP) system including a first CMP head and a second CMP head. The first CMP head is configured to retain a workpiece and comprises a first plurality of pressure elements disposed across a first pressure control plate. The second CMP head is configured to retain the workpiece. The second CMP head comprises a second plurality of pressure elements disposed across a second pressure control plate. A distribution of the first plurality of pressure elements across the first pressure control plate is different from a distribution of the second plurality of pressure elements across the second pressure control plate.

A method includes: delivering a slurry to a semiconductor tool through a piping network of a slurry delivery system; coupling an electrode pair to an outer wall of a pipe of the piping network; measuring one or more capacitance values associated with the electrode pair with the slurry being an insulting layer between the electrode pair; and deriving a quality metric of the slurry according to the one or more capacitance values.