Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm.sup.2 to 50.0 mm/mm.sup.2.

Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm.sup.2 to 50.0 mm/mm.sup.2.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

A processing apparatus includes a chuck table having a holding surface for holding a workpiece; a horizontal moving mechanism that moves the chuck table in a horizontal direction and is supplied with a first oil; and a vertical moving mechanism that moves a processing unit in a vertical direction and is supplied with a second oil. Before mounting the workpiece on the holding surface, the holding surface is imaged by a camera while being irradiated with light, and it is examined whether or not the picked-up image is emitting light. If there is a light-emitting part in the picked-up image, it is determined that oil is adhered to the light-emitting part.

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.