Patent classifications
B24B37/04
Consumable part monitoring in chemical mechanical polisher
A polishing apparatus includes a polishing station to hold a polishing pad, a carrier head to hold a substrate in contact with a polishing pad at the polishing station, a camera positioned to capture an image of a lower surface of a consumable part when the consumable part moves away from the polishing pad, and a controller configured to perform an image processing algorithm on the image to determine whether the consumable part is damaged. The consumable part can be a retaining ring on a carrier head, or a conditioner disk on a conditioner head.
Consumable part monitoring in chemical mechanical polisher
A polishing apparatus includes a polishing station to hold a polishing pad, a carrier head to hold a substrate in contact with a polishing pad at the polishing station, a camera positioned to capture an image of a lower surface of a consumable part when the consumable part moves away from the polishing pad, and a controller configured to perform an image processing algorithm on the image to determine whether the consumable part is damaged. The consumable part can be a retaining ring on a carrier head, or a conditioner disk on a conditioner head.
Polishing liquid, polishing liquid set, and polishing method
A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.
POLISHING APPARATUS AND POLISHING METHOD
A polishing apparatus includes a polishing table which supports a polishing pad, a polishing head which polishes a substrate by pressing the substrate against a polishing surface of the polishing pad, a pad temperature measuring device which measures a temperature of the polishing surface, a pad temperature adjusting device which adjusts the temperature of the polishing surface, and a control device which controls the operation of the pad temperature adjusting device based on the temperature of the polishing surface measured by the pad temperature measuring device. The pad temperature adjusting device includes a pad heater which is disposed to be separated upward from the polishing surface, and the pad heater includes a longitudinal portion which extends in a substantially radial direction of the polishing pad and a slit-shaped injection port which is formed in a longitudinal direction of the longitudinal portion and injects a heating fluid toward the polishing surface.
Polishing apparatus and polishing method
Provided is a polishing apparatus and polishing method which can preferably adjust a temperature of a surface of a polishing pad. A polishing apparatus includes: a polishing table configured to be rotatable, and to support the polishing pad; a substrate configured to hold an object to be polished, and to press the object to be polished against the polishing pad; a polishing liquid supplying portion configured to supply a polishing liquid to a polishing surface; a polishing liquid removing portion configured to remove the polishing liquid from the polishing surface; and a temperature adjuster configured to adjust a temperature of the polishing surface. In a rotating direction of the polishing table, the polishing liquid supplying portion, a polishing region where the object to be polished is pressed against the polishing surface by the substrate, the polishing liquid removing portion, and the temperature adjuster are disposed in this order.
Method for producing chain-like particle dispersion, and dispersion of chain-like particles
There is provided a production method of a chain silica particle dispersion. This production method includes a dispersion preparation step of hydrolyzing alkoxysilane in the presence of ammonia to prepare a silica particle dispersion, an ammonia removal step of removing the ammonia from the silica particle dispersion such that an ammonia amount relative to silica contained in the silica particle dispersion is 0.3% by mass or less, and a hydrothermal treatment step of hydrothermally treating the silica particle dispersion having a silica concentration of 12% by mass or more, from which the ammonia has been removed, at a temperature of not lower than 150° C. and lower than 250° C. An abrasive including such chain silica particles is high in polishing rate and excellent in polishing properties.
Derivatized polyamino acids
A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.
Method and apparatus for final polishing of silicon wafer
Provided are a method and apparatus for final polishing of a silicon wafer. The method for final polishing includes: within a predetermined period of time remaining before completion of the final polishing, forming a hydrophilic silicon oxide film on a surface of the silicon wafer by using both a polishing slurry and an oxidizing solution as a polishing liquid.
Polishing Article, Polishing System and Method of Polishing
A polishing article includes a polishing layer having a working surface including at least one multi-cell structure disposed on the working surface. The multi-cell structure includes three cells, defined as a first cell, a second cell and a third cell. Each of the three cells includes at least one sidewall defining a cell shape. The first cell and the second cell include a first common sidewall including a first channel, having a first channel length, allowing fluid communication between the first cell and the second cell, and a first axis perpendicular to the first channel length and substantially parallel to the working surface. Further, the second cell and the third cell include a second common sidewall including a second channel, having a second channel length, allowing fluid communication between the second cell and the third cell, and a second axis perpendicular to the second channel length and substantially parallel to the working surface. An included angle between the first axis and the second axis is from 0° to less than 180°.
METHOD FOR REFRESHING POLISHING PAD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
The present disclosure relates to a method for refreshing a polishing pad, and, through increasing a useful life of a polishing pad used in a polishing process, is capable of reducing the amount of discarded polishing pad, and significantly enhancing polishing efficiency by shortening the time required to replace the polishing pad. In addition, a method for manufacturing a semiconductor device is a manufacturing process using the method for refreshing a polishing pad, wherein a polishing pad having the period of usage ended is reusable by having polishing performance equivalent to a new polishing pad, and process efficiency may be enhanced by reducing the number of replacements of polishing pads.