A polishing liquid containing: abrasive grains containing a hydroxide of a tetravalent metal element; and a nitrogen-containing compound having a hydrocarbon group having 6 or more carbon atoms and bonded to a nitrogen atom, in which the nitrogen-containing compound contains at least one selected from the group consisting of a quaternary ammonium salt, tertiary amine, and a heterocyclic compound having a quaternary nitrogen atom constituting a heterocyclic ring. A polishing method including a step of polishing a surface to be polished by using this polishing liquid.

Disclosed are substrate polishing apparatuses, substrate polishing systems, and/or substrate polishing methods. The substrate polishing apparatus may include an electric field applying module, and a platen that rotates a polishing pad. The electric field applying module may include an inner electrode having a circular shape when viewed in plan. The platen may be on the inner electrode. A central axis of the inner electrode may be spaced apart from a central axis of the platen. The inner electrode may include a first electrode and a second electrode that may surround the first electrode and may have an annular shape.

Embodiments described herein generally relate to a surface topology measurement device that enables mapping a surface profile of a polishing pad. Embodiments of the disclosure may include a method of measuring and/or adjusting a property of a polishing surface of a polishing pad disposed in a substrate processing system during processing or after one or more processes have been performed. The method can include positioning a surface topology measurement device such that the surface topology measurement device contacts the polishing surface of the polishing pad, generating a three-dimensional surface map of the polishing surface of the polishing pad, comparing the three-dimensional surface map of the polishing surface of the polishing pad to a predetermined threshold, and adjusting one or more properties of the substrate processing system based on the comparison of the three-dimensional surface map to the predetermined threshold.

Provided are a membrane and carrier head using the membrane for polishing apparatus. The membrane comprises a first fixing flap extending inwards from the upper part of a side portion, a second fixing flap extending upwards from the upper part of the side portion, wherein the second fixing flap has a first inclined part, a second inclined part and a third extending part of extending upwards whereby a compensation force generated by the inclined parts realize the constant pressing force to the edge of a substrate during a polishing process.

Provided are a membrane and carrier head using the membrane for polishing apparatus. The membrane comprises a first fixing flap extending inwards from the upper part of a side portion, a second fixing flap extending upwards from the upper part of the side portion, wherein the second fixing flap has a first inclined part, a second inclined part and a third extending part of extending upwards whereby a compensation force generated by the inclined parts realize the constant pressing force to the edge of a substrate during a polishing process.

Systems and methods for treating concrete, which includes the steps of wetting a surface of concrete with colloidal silica, allowing time for the colloidal silica to penetrate the concrete surface, and cutting the surface of the concrete with a bladed or segmented tool wherein the longitudinal blade or edge portion is positioned approximately at an angle between 30 degrees and 90 degrees relative to the surface of the concrete.

A polishing pad useful in chemical mechanical polishing comprising a polishing portion having a top polishing surface and comprising a polishing material an opening through the polishing pad, and a transparent window within the opening in the polishing pad, the transparent window being secured to the polishing pad and being transparent to at least one of magnetic and optical signals, the transparent window having a thickness and a top surface having a plurality of elements separated by interconnected recesses to provide a pattern in the top surface that includes recesses for improved deflection into a cavity in the polishing pad during polishing.

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

An elastic membrane having a physical property required for each portion of the elastic membrane and capable of uniformly polishing a workpiece is disclosed. The elastic membrane includes: a contact portion having a workpiece pressing surface for pressing a workpiece against a polishing surface; and a partition wall extending upward from the contact portion and forming a pressure chamber. The contact portion and at least a part of the partition wall are composed of a first rubber structure and a second rubber structure which are integrally formed, the first rubber structure has a first hardness, and the second rubber structure has a second hardness lower than the first hardness, the first rubber structure includes the workpiece pressing surface, and the second rubber structure includes the at least a part of the partition wall.

An elastic membrane having a physical property required for each portion of the elastic membrane and capable of uniformly polishing a workpiece is disclosed. The elastic membrane includes: a contact portion having a workpiece pressing surface for pressing a workpiece against a polishing surface; and a partition wall extending upward from the contact portion and forming a pressure chamber. The contact portion and at least a part of the partition wall are composed of a first rubber structure and a second rubber structure which are integrally formed, the first rubber structure has a first hardness, and the second rubber structure has a second hardness lower than the first hardness, the first rubber structure includes the workpiece pressing surface, and the second rubber structure includes the at least a part of the partition wall.