A polishing pad useful in chemical mechanical polishing comprises a base pad having a top side, and a plurality of protruding structures on the top side of the base pad, each of the protruding structures having a body, where the body has (i) an exterior perimeter surface defining an exterior shape of the protruding structure, (ii) an interior surface defining a central cavity and (iii) a top surface defining an initial polishing surface area, wherein the body further has openings in it from the cavity to the exterior perimeter surface.

A polishing pad useful in chemical mechanical polishing comprises a base pad having a top side, and a plurality of protruding structures on the top side of the base pad, each of the protruding structures having a body, where the body has (i) an exterior perimeter surface defining an exterior shape of the protruding structure, (ii) an interior surface defining a central cavity and (iii) a top surface defining an initial polishing surface area, wherein the body further has openings in it from the cavity to the exterior perimeter surface.

A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.

A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.

A substrate cleaning apparatus for cleaning a substrate while rotating the substrate and placing a cleaning member in contact with the rotating substrate is disclosed. The substrate cleaning apparatus comprises: a self-cleaning member mounted to an arm supporting the cleaning member, the self-cleaning member being configured to come into contact with the cleaning member to perform self-cleaning of the cleaning member; and a moving mechanism mounted to the arm supporting the cleaning member, the moving mechanism being configured to move the self-cleaning member between a position where the self-cleaning member is in contact with the cleaning member and a position where the self-cleaning member is separated from the cleaning member.

A substrate cleaning apparatus for cleaning a substrate while rotating the substrate and placing a cleaning member in contact with the rotating substrate is disclosed. The substrate cleaning apparatus comprises: a self-cleaning member mounted to an arm supporting the cleaning member, the self-cleaning member being configured to come into contact with the cleaning member to perform self-cleaning of the cleaning member; and a moving mechanism mounted to the arm supporting the cleaning member, the moving mechanism being configured to move the self-cleaning member between a position where the self-cleaning member is in contact with the cleaning member and a position where the self-cleaning member is separated from the cleaning member.

Chemical mechanical polishing can be used for “touch-up polishing” in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free.

Chemical mechanical polishing can be used for “touch-up polishing” in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free.

A wafer grinding apparatus performs grinding processing for grinding a semiconductor wafer with a grindstone. The grindstone has a wear rate as a characteristic. The wear rate is 5% or more, and less than 200%. A determination part performs determination processing for determining whether a grinding state with respect to the semiconductor wafer is abnormal or normal, based on at least one of a load current of a motor and a grinding wear amount.

A wafer grinding apparatus performs grinding processing for grinding a semiconductor wafer with a grindstone. The grindstone has a wear rate as a characteristic. The wear rate is 5% or more, and less than 200%. A determination part performs determination processing for determining whether a grinding state with respect to the semiconductor wafer is abnormal or normal, based on at least one of a load current of a motor and a grinding wear amount.