An automated polishing system includes a workbench, a transport unit and a polishing unit, wherein the transport unit is provided with a transport surface and a transport drive configured to drive the transport surface to move horizontally, and the polishing unit includes a supporting portion, a holding arm rotatably connected to the supporting portion, a holder connected to the holding arm, a horizontal drive configured to drive the supporting portion to move horizontally, a vertical drive configured to drive the supporting portion to move vertically, a horizontally rotating drive configured to drive the holding arm to rotate in a horizontal direction, a vertically rotating drive configured to drive the holder to rotate in a vertical direction, a polishing shaft, a polishing rotating device configured to drive the polishing shaft, and a polishing drive configured to drive the polishing shaft to move towards the holder for reciprocating motion.

An automated polishing system includes a workbench, a transport unit and a polishing unit, wherein the transport unit is provided with a transport surface and a transport drive configured to drive the transport surface to move horizontally, and the polishing unit includes a supporting portion, a holding arm rotatably connected to the supporting portion, a holder connected to the holding arm, a horizontal drive configured to drive the supporting portion to move horizontally, a vertical drive configured to drive the supporting portion to move vertically, a horizontally rotating drive configured to drive the holding arm to rotate in a horizontal direction, a vertically rotating drive configured to drive the holder to rotate in a vertical direction, a polishing shaft, a polishing rotating device configured to drive the polishing shaft, and a polishing drive configured to drive the polishing shaft to move towards the holder for reciprocating motion.

A buffing apparatus for buffing a substrate is provided. The apparatus includes: a buff table for holding the substrate, the buff table being rotatable; a buff head to which a buff pad for buffing the substrate is attachable, the buff head being rotatable and movable in a direction approaching the buff table and a direction away from the buff table, and an internal supply line for supplying process liquid for the buffing to the substrate being formed inside the buff head; and an external nozzle provided separately through the internal supply line in order to supply the process liquid to the substrate.

A buffing apparatus for buffing a substrate is provided. The apparatus includes: a buff table for holding the substrate, the buff table being rotatable; a buff head to which a buff pad for buffing the substrate is attachable, the buff head being rotatable and movable in a direction approaching the buff table and a direction away from the buff table, and an internal supply line for supplying process liquid for the buffing to the substrate being formed inside the buff head; and an external nozzle provided separately through the internal supply line in order to supply the process liquid to the substrate.

Chemical mechanical polishing can be used for touch-up polishing in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free.

Chemical mechanical polishing can be used for touch-up polishing in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free.

Embodiments of the present disclosure generally relate to methods of manufacturing polishing platens for use on a chemical mechanical polishing (CMP) system and polishing platens formed therefrom. A method of manufacturing a polishing includes positioning a polishing platen on a support of a manufacturing system. The manufacturing system includes the support and a cutting tool facing there towards. Here, the polishing platen includes a cylindrical metal body having a polymer layer disposed on a surface thereof and the polymer layer has a thickness of about 100 ?m or more. The method further includes removing at least a portion of the polymer layer using the cutting tool to form a polishing pad-mounting surface. Beneficially, the method may be used to form a pad-mounting surface having a desired flatness or shape, such as a concave or convex shape.

Embodiments of the present disclosure generally relate to methods of manufacturing polishing platens for use on a chemical mechanical polishing (CMP) system and polishing platens formed therefrom. A method of manufacturing a polishing includes positioning a polishing platen on a support of a manufacturing system. The manufacturing system includes the support and a cutting tool facing there towards. Here, the polishing platen includes a cylindrical metal body having a polymer layer disposed on a surface thereof and the polymer layer has a thickness of about 100 ?m or more. The method further includes removing at least a portion of the polymer layer using the cutting tool to form a polishing pad-mounting surface. Beneficially, the method may be used to form a pad-mounting surface having a desired flatness or shape, such as a concave or convex shape.

Methods and systems for making a composite substrate is provided. The method includes depositing a silicon layer on a surface of a silicon carbide wafer. The method includes smoothing the deposited silicon layer by Chemical Mechanical Polishing (CMP) and first annealing to produce a flat silicon surface on the silicon carbide wafer. The method includes bonding the flat silicon surface of the silicon carbide wafer with a gallium oxide wafer. The method includes second annealing the bonded silicon carbide wafer and gallium oxide wafer. The method includes thinning the bonded gallium oxide wafer to a thickness of about 2 to about 25 microns.

Methods and systems for making a composite substrate is provided. The method includes depositing a silicon layer on a surface of a silicon carbide wafer. The method includes smoothing the deposited silicon layer by Chemical Mechanical Polishing (CMP) and first annealing to produce a flat silicon surface on the silicon carbide wafer. The method includes bonding the flat silicon surface of the silicon carbide wafer with a gallium oxide wafer. The method includes second annealing the bonded silicon carbide wafer and gallium oxide wafer. The method includes thinning the bonded gallium oxide wafer to a thickness of about 2 to about 25 microns.