B24B37/27

Platen Shield Cleaning System

In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.

Three-zone carrier head and flexible membrane
11338409 · 2022-05-24 · ·

A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.

Three-zone carrier head and flexible membrane
11338409 · 2022-05-24 · ·

A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
20220152780 · 2022-05-19 ·

A substrate processing apparatus includes: a cassette block configured to mount a cassette that accommodates a substrate; a processing block configured to process the substrate; a relay block configured to relay the substrate between the cassette block and the processing block; and a controller. The processing block includes a processing module that performs a removal process of removing a part of the substrate. The relay block includes a weight measuring unit that measures a weight of the substrate before or after being processed by the processing block. The controller includes a removal amount determination unit that calculates a weight difference of the substrate before and after being processed by the processing block using the measurement result of the weight measuring unit and determines whether a removal amount by the removal process is within a permissible range.

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
20220152780 · 2022-05-19 ·

A substrate processing apparatus includes: a cassette block configured to mount a cassette that accommodates a substrate; a processing block configured to process the substrate; a relay block configured to relay the substrate between the cassette block and the processing block; and a controller. The processing block includes a processing module that performs a removal process of removing a part of the substrate. The relay block includes a weight measuring unit that measures a weight of the substrate before or after being processed by the processing block. The controller includes a removal amount determination unit that calculates a weight difference of the substrate before and after being processed by the processing block using the measurement result of the weight measuring unit and determines whether a removal amount by the removal process is within a permissible range.

SUBSTRATE CARRIER HEAD AND PROCESSING SYSTEM
20220126419 · 2022-04-28 ·

A substrate carrier head is disclosed. In one aspect, the carrier head includes a carrier body, a substrate retainer, a first resilient membrane and a second resilient membrane. The carrier head can include an inner support plate. The substrate retainer is attached to the carrier body. The substrate retainer includes an aperture configured to receive a substrate. The first resilient membrane includes a first imperforated substrate support portion with a width W1. The second resilient membrane includes a second imperforated substrate support portion with a width W2. The second imperforated substrate support portion is positioned between the first substrate support portion and the carrier body, and is configured to selectively provide a force against at least an inner section of the first imperforated substrate support portion. The inner support plate is fixed relative to the carrier body and includes a support surface configured to support the second imperforated substrate support portion.

EQUIPMENT AND METHOD FOR LAYING A FILM ON A PLATE-SHAPED PART HOLDER
20230241877 · 2023-08-03 ·

The invention relates to an equipment having an upstream holder for a supply reel carrying a continuous ribbon, a portion of which is suitable for forming a film intended to cover a support plate, a downstream holder, an assembly station having a base comprising having a first platen, an actuator with a movable part carrying a second platen, the second platen or the first platen being adapted to receive a support plate, wherein the second platen is adapted to cooperate with the first platen to form a tooling capable of contacting the film and the support plate when the portion of the ribbon forming the film is located between the second platen and the first platen, facing the support plate.

Method of manufacturing wafer holder

A method of manufacturing a wafer holder, the wafer holder having a frame having at least one cavity capable of receiving and supporting a wafer grown from an ingot to be polished in a polishing machine, the at least one cavity having a cross sectional footprint at least equal to a cross sectional footprint of the wafer, the wafer having a thickness to cross sectional area ratio of 0.001 per unit length or less, a polymer film pad being permanently affixed in the at least one cavity, including cutting a frame from a layer of a thermoset or thermoplastic material having a thickness tolerance and measuring a thickness of the frame at at least one location thereon. The method further includes forming a cavity in the frame having a predetermined depth, and permanently affixing a polymer film pad in the cavity.

Method of manufacturing wafer holder

A method of manufacturing a wafer holder, the wafer holder having a frame having at least one cavity capable of receiving and supporting a wafer grown from an ingot to be polished in a polishing machine, the at least one cavity having a cross sectional footprint at least equal to a cross sectional footprint of the wafer, the wafer having a thickness to cross sectional area ratio of 0.001 per unit length or less, a polymer film pad being permanently affixed in the at least one cavity, including cutting a frame from a layer of a thermoset or thermoplastic material having a thickness tolerance and measuring a thickness of the frame at at least one location thereon. The method further includes forming a cavity in the frame having a predetermined depth, and permanently affixing a polymer film pad in the cavity.

Compensation for substrate doping for in-situ electromagnetic inductive monitoring

A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.