Patent classifications
B24B37/27
WAFER EDGE ASYMMETRY CORRECTION USING GROOVE IN POLISHING PAD
A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.
WAFER EDGE ASYMMETRY CORRECTION USING GROOVE IN POLISHING PAD
A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.
Polishing technique for flexible tubes
Various examples are provided for polishing techniques for flexible tubular workpieces. In one example, a method includes supporting a tubular workpiece on a rod that extends axially through it; positioning a turning wheel against an external surface of the tubular workpiece, where it is held by magnetic attraction; and rotating the tubular workpiece by rotating the turning wheel. The external surface of the tubular workpiece is polished by the abrasive particles during rotation of the tubular workpiece. In another example, a polishing system includes a workpiece holder including a rod configured to axially support a tubular workpiece; a turning wheel with abrasive particles distributed about an outer surface; a wheel support assembly configured to position the outer surface of the turning wheel against the an external surface of the tubular workpiece, where it is held by magnetic attraction. The external surface is polished during rotation of the tubular workpiece.
Polishing technique for flexible tubes
Various examples are provided for polishing techniques for flexible tubular workpieces. In one example, a method includes supporting a tubular workpiece on a rod that extends axially through it; positioning a turning wheel against an external surface of the tubular workpiece, where it is held by magnetic attraction; and rotating the tubular workpiece by rotating the turning wheel. The external surface of the tubular workpiece is polished by the abrasive particles during rotation of the tubular workpiece. In another example, a polishing system includes a workpiece holder including a rod configured to axially support a tubular workpiece; a turning wheel with abrasive particles distributed about an outer surface; a wheel support assembly configured to position the outer surface of the turning wheel against the an external surface of the tubular workpiece, where it is held by magnetic attraction. The external surface is polished during rotation of the tubular workpiece.
Apparatus for chemical-mechanical polishing
An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.
Apparatus for chemical-mechanical polishing
An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.
Apparatus of chemical mechanical polishing and operating method thereof
An apparatus for chemical mechanical polishing includes a pad conditioner. The pad conditioner includes a first disk having a first surface and a second disk having a second surface. The first surface has a first plurality of abrasives with a first mean size and the second surface has a second plurality of abrasives with a second mean size greater than the first mean size.
Apparatus of chemical mechanical polishing and operating method thereof
An apparatus for chemical mechanical polishing includes a pad conditioner. The pad conditioner includes a first disk having a first surface and a second disk having a second surface. The first surface has a first plurality of abrasives with a first mean size and the second surface has a second plurality of abrasives with a second mean size greater than the first mean size.
PROCESSING APPARATUS
A grinding apparatus has a hermetically sealed chamber defined by a portion of a holding surface which extends radially outwardly from a wafer, an outer wall surface of a first annular packing, a lower surface of a plate, and an inner wall surface of a second annular packing. A negative pressure is developed by suction forces applied from the holding surface, allowing the atmospheric pressure to press the plate toward the holding surface and causing the first annular packing to press an outer circumferential portion of the wafer against the holding surface. Since the outer circumferential portion of the wafer is pressed against the holding surface under the suction forces from the holding surface and the atmospheric pressure, the forces pressing the outer circumferential portion of the wafer against the holding surface are increased easily at a low cost without increasing the size and weight of the grinding apparatus.
PROCESSING APPARATUS
A grinding apparatus has a hermetically sealed chamber defined by a portion of a holding surface which extends radially outwardly from a wafer, an outer wall surface of a first annular packing, a lower surface of a plate, and an inner wall surface of a second annular packing. A negative pressure is developed by suction forces applied from the holding surface, allowing the atmospheric pressure to press the plate toward the holding surface and causing the first annular packing to press an outer circumferential portion of the wafer against the holding surface. Since the outer circumferential portion of the wafer is pressed against the holding surface under the suction forces from the holding surface and the atmospheric pressure, the forces pressing the outer circumferential portion of the wafer against the holding surface are increased easily at a low cost without increasing the size and weight of the grinding apparatus.