A method implemented by computer for processing an unfinished optical lens member for manufacturing an optical lens, the unfinished optical lens member having an unfinished surface and an aspherical finished surface having a first reference system with a first reference point, and the optical lens to be manufactured including first and second surfaces, the first surface including a second reference system with a second reference point and included in the aspherical finished surface of the lens member, the method including: providing an unfinished optical lens member data; providing an optical function; providing a reference point position; providing an optical lens parameter; determining a reference system; determining a first surface dataset; and determining a second surface dataset.

A method for polishing a wafer in order to correct a shape of a polished wafer subjected to polishing, by pressing the wafer to a polishing pad while continuously supplying a composition for polishing containing water to perform correction-polishing, the method including the steps of: measuring the shape of the polished wafer before performing the correction-polishing; determining, in accordance with the measured shape of the polished wafer, a kind and concentration of a surfactant to be contained in the composition for polishing; and performing the correction-polishing while supplying the composition for polishing adjusted on a basis of the determined kind and concentration of the surfactant. This provides a method and apparatus for polishing a wafer that make it possible to reduce, in the latter polishing step, a variation in the shape of the wafer that occurred in a preceding polishing step.

A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

A grinding machine and a method for measuring and producing a target outer contour is disclosed, particularly for a pin-bearing journal of a crankshaft. First, a measurement device acquires measurement values for the dimensions and shape of a workpiece in at least two measurement planes that are spaced apart and extend transversely to a longitudinal extension of a workpiece region. The measurement planes are produced by a relative movement of the workpiece region and the measurement device in a Z axis direction, relative to the movement of a grinding disc in the direction of the Z-axis thereof. These measurement values are transmitted to a CNC system for advancing a grinding disc, such that any deviations from the target contour that may be present are corrected, and the target contour of the workpiece region in question is ground adaptively on the basis of the measurement values.

A grinding machine and a method for measuring and producing a target outer contour is disclosed, particularly for a pin-bearing journal of a crankshaft. First, a measurement device acquires measurement values for the dimensions and shape of a workpiece in at least two measurement planes that are spaced apart and extend transversely to a longitudinal extension of a workpiece region. The measurement planes are produced by a relative movement of the workpiece region and the measurement device in a Z axis direction, relative to the movement of a grinding disc in the direction of the Z-axis thereof. These measurement values are transmitted to a CNC system for advancing a grinding disc, such that any deviations from the target contour that may be present are corrected, and the target contour of the workpiece region in question is ground adaptively on the basis of the measurement values.

A workpiece to be ground by a grinding wheel of a grinding apparatus has a first layer including a first material and a second layer including a second material that is harder to grind than the first material and stacked on the first layer. The rotational speed of the grinding wheel for grinding the second layer, i.e., a second rotational speed, is lower than the rotational speed of the grinding wheel for grinding the first layer, i.e., a first rotational speed. The second layer can thus be ground effectively, as it is not necessary to use a grinding wheel with a high grinding capability or to lower a rate at which the workpiece is ground. Consequently, it is possible to maintain productivity for device chips manufactured by dividing the workpiece, and also prevent the footprint of the grinding apparatus from increasing.

A workpiece to be ground by a grinding wheel of a grinding apparatus has a first layer including a first material and a second layer including a second material that is harder to grind than the first material and stacked on the first layer. The rotational speed of the grinding wheel for grinding the second layer, i.e., a second rotational speed, is lower than the rotational speed of the grinding wheel for grinding the first layer, i.e., a first rotational speed. The second layer can thus be ground effectively, as it is not necessary to use a grinding wheel with a high grinding capability or to lower a rate at which the workpiece is ground. Consequently, it is possible to maintain productivity for device chips manufactured by dividing the workpiece, and also prevent the footprint of the grinding apparatus from increasing.

The present disclosure provides a precision calibrating device and a precision calibrating method for a magnetorheological polishing device, which realize an automatic and quick calibration process. It is ensured that a polishing gap is kept within an allowable error range when the magnetorheological polishing device processes surfaces of different optical elements, thereby effectively controlling a removal function, reducing or eliminating surface residual errors after processing and low frequency errors and medium frequency errors introduced by insufficient trajectory precision of a mechanical arm, and improving a processing precision of the magnetorheological polishing device based on the mechanical arm.

The present disclosure provides a precision calibrating device and a precision calibrating method for a magnetorheological polishing device, which realize an automatic and quick calibration process. It is ensured that a polishing gap is kept within an allowable error range when the magnetorheological polishing device processes surfaces of different optical elements, thereby effectively controlling a removal function, reducing or eliminating surface residual errors after processing and low frequency errors and medium frequency errors introduced by insufficient trajectory precision of a mechanical arm, and improving a processing precision of the magnetorheological polishing device based on the mechanical arm.