A method of polishing a target surface of a waveguide to achieve perpendicularity relative to a reference surface is disclosed. The method includes i) providing a polishing apparatus having a polishing plate with a flat surface defining a reference plane, and an adjustable mounting apparatus configured to hold the waveguide during polishing at a plurality of angular orientations; ii) positioning an optical alignment sensor and a light reflecting apparatus such that a first collimated light beam is reflected off of a surface parallel to the reference plane, and a second perpendicular collimated light beam is reflected off of the reference surface; iii) aligning the waveguide within the polishing apparatus such that the reflections received by the optical alignment sensor align within the optical alignment sensor, thereby being indicative of perpendicularity between the reference plane and the reference surface; and iv) polishing the target surface of the aligned waveguide.

A method of polishing a target surface of a waveguide to achieve perpendicularity relative to a reference surface is disclosed. The method includes i) providing a polishing apparatus having a polishing plate with a flat surface defining a reference plane, and an adjustable mounting apparatus configured to hold the waveguide during polishing at a plurality of angular orientations; ii) positioning an optical alignment sensor and a light reflecting apparatus such that a first collimated light beam is reflected off of a surface parallel to the reference plane, and a second perpendicular collimated light beam is reflected off of the reference surface; iii) aligning the waveguide within the polishing apparatus such that the reflections received by the optical alignment sensor align within the optical alignment sensor, thereby being indicative of perpendicularity between the reference plane and the reference surface; and iv) polishing the target surface of the aligned waveguide.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

A polishing apparatus capable of forming a step-shaped recess having a right-angled cross section in an edge portion of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a substrate rotating device configured to rotate the substrate about a rotation axis; a first roller having a first circumferential surface configured to press a polishing tape against the edge portion of the substrate; and a second roller having a second circumferential surface in contact with the first circumferential surface. The second roller has a tape stopper surface that restricts movement of the polishing tape in a direction away from the rotation axis. The tape stopper surface is located radially outward of the first circumferential surface.

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

The present invention relates to a polishing head for pressing a polishing tool against a substrate, such as a wafer. Further, the present invention relates to a polishing apparatus for polishing a substrate with such a polishing head. A polishing head (10) includes an annular elastic member (40) configured to press a polishing tool (3) against the substrate (W), and a pressing-tool body (43) having a pressing surface (44) configured to press the polishing tool (3) against the substrate (W) via the elastic member (40), wherein the pressing surface (44) has a first fitting groove (45) in which a first portion (41) of the elastic member (40) fits, the first portion (41) protrudes from the pressing surface (44), the elastic member (40) is put on the pressing-tool body (43) with the elastic member (40) elastically deformed, and the polishing head (10) is configured to press the polishing tool (3) against the substrate (W) by the first portion (41).

An automated painting system that includes a robotic arm and a painting end effector coupled at a distal end of the robotic arm, with the painting end effector configured to apply paint to a target surface. The painting system can also include a computing device executing a computational planner that: generates instructions for driving the painting end effector and robotic arm to perform at least one painting task that includes applying paint, via the painting the end effector, to a plurality of drywall pieces, the generating based at least in part on obtained target surface data; and drives the end effector and robotic arm to perform the at least one painting task.

An automated painting system that includes a robotic arm and a painting end effector coupled at a distal end of the robotic arm, with the painting end effector configured to apply paint to a target surface. The painting system can also include a computing device executing a computational planner that: generates instructions for driving the painting end effector and robotic arm to perform at least one painting task that includes applying paint, via the painting the end effector, to a plurality of drywall pieces, the generating based at least in part on obtained target surface data; and drives the end effector and robotic arm to perform the at least one painting task.