Patent classifications
B24B49/14
CONTAINMENT AND EXHAUST SYSTEM FOR SUBSTRATE POLISHING COMPONENTS
Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.
MACHINING MACHINE AND METHOD FOR OPERATING A MACHINING MACHINE
A machining machine includes an annular bottom working disk and a top counter bearing element. The bottom working disk and top counter bearing element are driven to rotate relative to each other. A working gap is defined between the bottom working disk and the top counter bearing to machine flat work pieces on at least one side. A means for generating a local deformation of the bottom working disk are also provided.
MACHINING MACHINE AND METHOD FOR OPERATING A MACHINING MACHINE
A machining machine includes an annular bottom working disk and a top counter bearing element. The bottom working disk and top counter bearing element are driven to rotate relative to each other. A working gap is defined between the bottom working disk and the top counter bearing to machine flat work pieces on at least one side. A means for generating a local deformation of the bottom working disk are also provided.
ABRASIVES, POLISHING COMPOSITION, AND POLISHING METHOD
Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m.sup.2/g or more and 50 m.sup.2/g or less and an average secondary particle diameter of 0.05 μm or more and 4.8 μm or less. This polishing composition can be used for polishing an outer surface of the resin coating.
Method for compensating temperature-induced deviations in a grinding machine and machine being equipped corresondingly
Method for compensating temperature-induced deviations in a grinding machine includes controlling the movements of the dressing tool relative to the grinding tool in order to relatively move the dressing tool towards the grinding tool; checking whether a first-cut detection signalizes a contact of the grinding tool and the dressing tool; repeating the controlling and checking steps until a contact between the grinding tool and the dressing tool is detected, and when the contact is detected, then (i) recording the Current Position, and (ii) carrying out a compensation calculation using the Current Position and a reference position.
Method for compensating temperature-induced deviations in a grinding machine and machine being equipped corresondingly
Method for compensating temperature-induced deviations in a grinding machine includes controlling the movements of the dressing tool relative to the grinding tool in order to relatively move the dressing tool towards the grinding tool; checking whether a first-cut detection signalizes a contact of the grinding tool and the dressing tool; repeating the controlling and checking steps until a contact between the grinding tool and the dressing tool is detected, and when the contact is detected, then (i) recording the Current Position, and (ii) carrying out a compensation calculation using the Current Position and a reference position.
METHOD OF MONITORING A VIBRATORY GRINDING PROCESS
In a method of monitoring a vibratory grinding process, parameters from different parameter groups are detected and evaluated to output a command for operating the vibratory grinding system.
METHOD OF MONITORING A VIBRATORY GRINDING PROCESS
In a method of monitoring a vibratory grinding process, parameters from different parameter groups are detected and evaluated to output a command for operating the vibratory grinding system.
SEMICONDUCTOR SUBSTRATE POLISHING WITH POLISHING PAD TEMPERATURE CONTROL
A method of preheating a polishing pad of a semiconductor wafer polishing system includes heating a fluid to a first predetermined temperature. The method also includes applying the fluid to the polishing pad. The method further includes rotating the polishing pad such that the fluid covers the polishing pad. The fluid increases a polishing pad temperature to a second predetermined temperature.
SEMICONDUCTOR SUBSTRATE POLISHING WITH POLISHING PAD TEMPERATURE CONTROL
A method of preheating a polishing pad of a semiconductor wafer polishing system includes heating a fluid to a first predetermined temperature. The method also includes applying the fluid to the polishing pad. The method further includes rotating the polishing pad such that the fluid covers the polishing pad. The fluid increases a polishing pad temperature to a second predetermined temperature.