A device for robot-assisted machining of surfaces is described below. According to an example, the device has a retainer with a base plate designed for mounting on a manipulator and has an assembly suspended on the retainer, the assembly comprising a machine tool. The retainer has a tilt mechanism which couples the assembly to the retainer in such a way that the assembly can be tilted relative to the base plate about two axes of rotation, wherein the two axes of rotation can intersect with one another and run through the assembly below the base plate.

Disclosed are a machining method and a machining device improving machining efficiency and preserving workpiece surface integrity. The machining method improving machining efficiency and preserving workpiece surface integrity includes: setting a workpiece (300) and a machining unit (400); and machining the workpiece (300) by the machining unit (400) at a preset machining speed, wherein the preset machining speed is not lower than a machining speed corresponding to the embrittlement of the workpiece material. By the machining method, the machining speed of the machining unit (400) is set during machining, which results in “skin effect” of subsurface damage caused by the embrittlement of the workpiece material (300) and enables the damage depth of the workpiece (300) to be confined in a shallow subsurface layer, so that the damage depth of the workpiece (300) is reduced, the workpiece integrity is preserved, and the machining quality and the machining efficiency are improved.

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses. The polishing-end-point detection process includes measuring a torque for rotating the polishing table (3) and determining a polishing end point based on the torque.

The sum of torques: the torque of the sun gear and the torque of the internal gear, and the ratio of the torques are controlled within predetermined ranges.

A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

Pressure disturbances in a pneumatic robotic force control device—including force overshoot upon initial contact between a robotic tool and a workpiece—are mitigated by increasing the mass air flow in or out of a pneumatic chamber via one or more force overshoot mitigation air passages formed in the robotic force control device. The force overshoot mitigation air passages may connect the two chambers in air flow relationship, or may allow air flow from a chamber to the exterior. The force overshoot mitigation air passages may have a static or variable effective area. The optimal area may be calculated based on measured flow rates and pressures during typical use cases.

Pressure disturbances in a pneumatic robotic force control device—including force overshoot upon initial contact between a robotic tool and a workpiece—are mitigated by increasing the mass air flow in or out of a pneumatic chamber via one or more force overshoot mitigation air passages formed in the robotic force control device. The force overshoot mitigation air passages may connect the two chambers in air flow relationship, or may allow air flow from a chamber to the exterior. The force overshoot mitigation air passages may have a static or variable effective area. The optimal area may be calculated based on measured flow rates and pressures during typical use cases.

A method of raising a polishing head capable of preventing a workpiece from bending and preventing an excessive stress from generating in the workpiece by avoiding contact between the workpiece and a retainer ring when the polishing head is raised from a polishing pad after polishing of the workpiece is disclosed. The method includes: polishing the workpiece by pressing the workpiece against the polishing pad while rotating the polishing head and the polishing pad; stopping the rotations of the polishing pad and the polishing head; raising the retainer ring of the polishing head relative to the workpiece to separate the retainer ring from the polishing pad and moving the retainer ring to a position higher than the workpiece; and then raising the polishing head with the workpiece held on the polishing head.

A method of conditioning a polishing pad includes positioning a conditioning head to bring a conditioning pad into contact with a polishing surface of a polishing pad. The method further includes generating a first pressure signal using a first pressure sensor based on a force being applied to the polishing surface by the conditioning pad. The method further includes generating a surface condition signal using an optical scanner. The method further includes adjusting the positioning of the conditioning pad in response to at least one of the first pressure signal or the surface condition signal.