A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

According to one embodiment, there is provided a top ring for holding a substrate. The top ring comprises a substrate supporting surface, a retainer member disposed to surround an outer periphery of the substrate supporting surface, and a retainer guiding device configured to guide the retainer member so as to allow the retainer member to be displaced in a direction perpendicular to the substrate supporting surface, and support the retainer member so as to inhibit the retainer member from being displaced in a direction parallel to and away from the substrate supporting surface. The retainer guiding device is disposed in an inner side of the retainer member surrounding the substrate supporting surface.

A determining method includes performing processing according to a processing condition by using a grindstone tool, and writing processing information to an IC tag provided to the grindstone tool or a case configured to house the grindstone tool, the processing information each including information about a workpiece, the processing condition, and an amount of wear of the grindstone tool, reading the processing information written to the IC tag, and generating wear tendency information by determining a wear tendency of the grindstone tool from a relation between a cumulative processing amount of the workpiece, the cumulative processing amount being obtained from the processing information, and a cumulative wear amount of the grindstone tool, the cumulative wear amount corresponding to the cumulative processing amount, and determining propriety of the grindstone tool or the processing condition for the workpiece on a basis of the wear tendency information.

A determining method includes performing processing according to a processing condition by using a grindstone tool, and writing processing information to an IC tag provided to the grindstone tool or a case configured to house the grindstone tool, the processing information each including information about a workpiece, the processing condition, and an amount of wear of the grindstone tool, reading the processing information written to the IC tag, and generating wear tendency information by determining a wear tendency of the grindstone tool from a relation between a cumulative processing amount of the workpiece, the cumulative processing amount being obtained from the processing information, and a cumulative wear amount of the grindstone tool, the cumulative wear amount corresponding to the cumulative processing amount, and determining propriety of the grindstone tool or the processing condition for the workpiece on a basis of the wear tendency information.

A chemical mechanical polishing apparatus is provided. The chemical mechanical polishing apparatus includes a polishing pad, a pad conditioner, a measurement tool, and a controller. The polishing pad is provided in a processing chamber for polishing a wafer placed on the polishing surface of the polishing pad. The pad conditioner is configured to condition the polishing surface. The measurement tool is provided in the processing chamber and configured to measure the downward force of the pad conditioner. The controller is coupled to the pad conditioner and the measurement tool, and is configured to adjust the downward force of the pad conditioner in response to an input from the measurement tool.

A chemical mechanical polishing apparatus is provided. The chemical mechanical polishing apparatus includes a polishing pad, a pad conditioner, a measurement tool, and a controller. The polishing pad is provided in a processing chamber for polishing a wafer placed on the polishing surface of the polishing pad. The pad conditioner is configured to condition the polishing surface. The measurement tool is provided in the processing chamber and configured to measure the downward force of the pad conditioner. The controller is coupled to the pad conditioner and the measurement tool, and is configured to adjust the downward force of the pad conditioner in response to an input from the measurement tool.

A height of an upper surface of a sub-chuck table is measured by a holding surface measuring unit in contact with the upper surface of the sub-chuck table. A height of a holding surface of a chuck table is measured by an upper surface height measuring unit in contact with the holding surface of the chuck table. A first difference between the height of the upper surface of the sub-chuck table and the height of the holding surface of the chuck table is calculated. A workpiece is held on the holding surface, and the height of the upper surface of the sub-chuck table is calculated again by the holding surface measuring unit. The upper surface height measuring unit is brought into contact with the upper surface of the workpiece by vertically moving it, and the height of the upper surface of the workpiece is measured.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a conditioner head to hold a conditioner disk in contact with the polishing pad, a motor to generate relative motion between the polishing pad and the conditioner disk so as to condition the polishing pad, an in-situ acoustic monitoring system having an acoustic sensor to receive acoustic signals from the conditioner disk, and a controller configured to analyze a signal from the acoustic sensor and determine a characteristic of the conditioner disk or conditioner head based on the signal.

A wafer processing method is provided. The method includes preparing a wafer having a notch portion at one side thereof, aligning the wafer by analyzing image information of the notch portion captured by a vision camera, and processing the notch portion using a notch wheel so that a certain region of the notch portion has a preset thickness.