CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a composite conditioner can include a base plate and a plurality of polishing units secured to a surface of the base plate by an adhesive layer, where each polishing unit includes a plurality of polishing tips secured in a binding layer. Additionally, a height difference between a first highest polishing tip and a second highest polishing tip is less than or equal to about 10 μm, a height difference between the first highest polishing tip and a tenth highest polishing tip is less than or equal to about 20 μm, and a height difference between the first highest polishing tip and a 100th highest polishing tip is less than or equal to about 40 μm. Furthermore, the first highest polishing tip protrudes from the binding layer to a height of greater than or equal to about 50 μm.

CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a composite conditioner can include a base plate and a plurality of polishing units secured to a surface of the base plate by an adhesive layer, where each polishing unit includes a plurality of polishing tips secured in a binding layer. Additionally, a height difference between a first highest polishing tip and a second highest polishing tip is less than or equal to about 10 μm, a height difference between the first highest polishing tip and a tenth highest polishing tip is less than or equal to about 20 μm, and a height difference between the first highest polishing tip and a 100th highest polishing tip is less than or equal to about 40 μm. Furthermore, the first highest polishing tip protrudes from the binding layer to a height of greater than or equal to about 50 μm.

Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.

A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.

A conditioning method which can efficiently produce surface roughness of a polishing pad to obtain an optimum polishing rate by performing dressing while monitoring the surface roughness of the polishing pad and adjusting a temperature of the polishing pad is disclosed. The conditioning method includes measuring surface roughness of the polishing pad during dressing of the polishing pad, comparing the measured surface roughness with preset target surface roughness to obtain comparison result, and adjusting a surface temperature of the polishing pad by heating or cooling the polishing pad based on the comparison result. The surface roughness is represented by at least one of five indexes comprising arithmetical mean deviation of the roughness profile (Ra), root mean square deviation of the roughness profile (Rq), maximum profile valley depth of the roughness profile (Rv), maximum profile peak height of the roughness profile (Rp), and maximum height of the roughness profile (Rz).

A conditioning method which can efficiently produce surface roughness of a polishing pad to obtain an optimum polishing rate by performing dressing while monitoring the surface roughness of the polishing pad and adjusting a temperature of the polishing pad is disclosed. The conditioning method includes measuring surface roughness of the polishing pad during dressing of the polishing pad, comparing the measured surface roughness with preset target surface roughness to obtain comparison result, and adjusting a surface temperature of the polishing pad by heating or cooling the polishing pad based on the comparison result. The surface roughness is represented by at least one of five indexes comprising arithmetical mean deviation of the roughness profile (Ra), root mean square deviation of the roughness profile (Rq), maximum profile valley depth of the roughness profile (Rv), maximum profile peak height of the roughness profile (Rp), and maximum height of the roughness profile (Rz).

Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

A polishing apparatus includes a chuck table, a rotation mechanism that rotates the chuck table around a predetermined rotation axis, a polishing unit that has a spindle and in which a polishing pad for polishing the wafer sucked and held by the holding surface is mounted on a lower end part of the spindle, a slurry supply unit, and a cleaning unit that cleans the holding surface. The cleaning unit has a cleaning abrasive stone for removing the slurry that adheres to the holding surface through getting contact with the holding surface and a positioning unit that positions the cleaning abrasive stone to a cleaning position at which the cleaning abrasive stone gets contact with the holding surface and an evacuation position at which the cleaning abrasive stone is separate from the holding surface. Hardness of the cleaning abrasive stone is lower than the hardness of the holding surface.