A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

A manufacturing method of a pad conditioner by reverse plating is disclosed. The method comprises: forming a first plating layer on a temporary substrate to have multiple recesses; forming a second adhesive photosensitive film on the first plating layer; putting grains into the recesses; forming a first filling layer to support the grains; forming a second filling layer to support the grains; removing the second adhesive photosensitive film and forming a second boundary layer on the entire surface; forming a second plating layer on the second boundary layer; removing the temporary substrate and attaching a final substrate to the second plating layer; removing the first boundary layer and the first plating layer; removing the second boundary layer excluding a portion not exposed to the outside; and forming a third plating layer on an entire surface opposite to the final substrate to support the grains.

A manufacturing method of a pad conditioner by reverse plating is disclosed. The method comprises: forming a first plating layer on a temporary substrate to have multiple recesses; forming a second adhesive photosensitive film on the first plating layer; putting grains into the recesses; forming a first filling layer to support the grains; forming a second filling layer to support the grains; removing the second adhesive photosensitive film and forming a second boundary layer on the entire surface; forming a second plating layer on the second boundary layer; removing the temporary substrate and attaching a final substrate to the second plating layer; removing the first boundary layer and the first plating layer; removing the second boundary layer excluding a portion not exposed to the outside; and forming a third plating layer on an entire surface opposite to the final substrate to support the grains.

A CMP pad conditioner assembly includes a backing plate including a first face including a plurality of first mounting locations and a second face including a plurality of second mounting locations. A plurality of segments is secured to the first face. The segments include a substrate having a first surface and a second surface opposite the first surface. A plurality of protrusions is integral with the substrate protruding away from the first surface. The protrusions are coated with a conformal diamond layer. A plurality of second segments is secured to the second face, the second segments including a substrate having a first surface and a second surface opposite the first surface. Each of the second segments includes a plurality of protrusions integral with the substrate protruding away from the first surface. The protrusions are coated with a conformal diamond layer.

A CMP pad conditioner assembly includes a backing plate including a first face including a plurality of first mounting locations and a second face including a plurality of second mounting locations. A plurality of segments is secured to the first face. The segments include a substrate having a first surface and a second surface opposite the first surface. A plurality of protrusions is integral with the substrate protruding away from the first surface. The protrusions are coated with a conformal diamond layer. A plurality of second segments is secured to the second face, the second segments including a substrate having a first surface and a second surface opposite the first surface. Each of the second segments includes a plurality of protrusions integral with the substrate protruding away from the first surface. The protrusions are coated with a conformal diamond layer.

There is provided an apparatus for polishing an object to be polished using a polishing pad having a polishing surface, the apparatus including a polishing table for supporting the polishing pad, the polishing table being configured to be rotatable, a substrate holding unit configured to hold the object to be polished and pressing the object to be polished against the polishing pad, and a polishing-liquid removing unit configured to remove polishing liquid from the polishing surface. The polishing-liquid removing unit includes a rinse unit configured to jet cleaning liquid onto the polishing surface and a sucking unit configured to suck the polishing liquid on the polishing surface onto which the cleaning liquid is jetted. The rinse unit includes a cleaning space surrounded by a sidewall. The sidewall includes an opening section for opening the cleaning space toward a radial direction outer side of the polishing table.

There is provided an apparatus for polishing an object to be polished using a polishing pad having a polishing surface, the apparatus including a polishing table for supporting the polishing pad, the polishing table being configured to be rotatable, a substrate holding unit configured to hold the object to be polished and pressing the object to be polished against the polishing pad, and a polishing-liquid removing unit configured to remove polishing liquid from the polishing surface. The polishing-liquid removing unit includes a rinse unit configured to jet cleaning liquid onto the polishing surface and a sucking unit configured to suck the polishing liquid on the polishing surface onto which the cleaning liquid is jetted. The rinse unit includes a cleaning space surrounded by a sidewall. The sidewall includes an opening section for opening the cleaning space toward a radial direction outer side of the polishing table.

A CMP system includes a polishing apparatus configured to polish a wafer and roll cleaning apparatus, which includes a rotating roll brush configured to roll against a surface of the wafer during operation, a fluid supply system configured to apply a fluid on the surface of the wafer, and an array of liquid sensors configured to detect a distribution of the fluid on the surface of the wafer in areas that are not covered by the rotating roll brush.