A method for performing a chemical mechanical polishing (CMP) is disclosed. The method includes supplying a slurry onto a polishing pad, holding a first wafer against the polishing pad by a first polishing head, holding a second wafer against the polishing pad by a second polishing head, and rotating the polishing pad.

A method for performing a chemical mechanical polishing (CMP) is disclosed. The method includes supplying a slurry onto a polishing pad, holding a first wafer against the polishing pad by a first polishing head, holding a second wafer against the polishing pad by a second polishing head, and rotating the polishing pad.

The present invention relates to a CMP apparatus having a polishing pad surface property measuring device for measuring surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The CMP apparatus includes a polishing pad surface property measuring device (30) configured to apply a laser beam to a surface of a polishing pad (2) and to receive reflected light from the polishing pad to obtain reflection intensity in each reflection angle, a processor (40) configured to perform a Fourier transform on a reflection intensity distribution obtained by the measuring device to obtain a spatial wavelength spectrum of the surface of the polishing pad and to obtain surface properties of the polishing pad by numerical analysis, a dressing control unit (23) configured to determine dressing conditions of the polishing pad (2) by a closed loop control based on the surface properties of the polishing pad obtained by the processor, and a dressing apparatus (20) configured to dress the polishing pad based on the dressing conditions determined by the dressing control unit.

The present invention relates to a CMP apparatus having a polishing pad surface property measuring device for measuring surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The CMP apparatus includes a polishing pad surface property measuring device (30) configured to apply a laser beam to a surface of a polishing pad (2) and to receive reflected light from the polishing pad to obtain reflection intensity in each reflection angle, a processor (40) configured to perform a Fourier transform on a reflection intensity distribution obtained by the measuring device to obtain a spatial wavelength spectrum of the surface of the polishing pad and to obtain surface properties of the polishing pad by numerical analysis, a dressing control unit (23) configured to determine dressing conditions of the polishing pad (2) by a closed loop control based on the surface properties of the polishing pad obtained by the processor, and a dressing apparatus (20) configured to dress the polishing pad based on the dressing conditions determined by the dressing control unit.

The present disclosure, in some embodiments, relates to a polishing system. The polishing system includes a carrier head configured to enclose a wafer. The carrier head has a retainer ring configured to laterally surround the wafer and an abrasive structure that partially covers a lower surface of the retainer ring. A membrane support is surrounded by the retainer ring and defines one or more ports. One or more chambers are coupled to the one or more ports and are defined by the membrane support and a flexible membrane having a lower surface configured to contact the wafer.

The present disclosure, in some embodiments, relates to a polishing system. The polishing system includes a carrier head configured to enclose a wafer. The carrier head has a retainer ring configured to laterally surround the wafer and an abrasive structure that partially covers a lower surface of the retainer ring. A membrane support is surrounded by the retainer ring and defines one or more ports. One or more chambers are coupled to the one or more ports and are defined by the membrane support and a flexible membrane having a lower surface configured to contact the wafer.

A sample grinder includes a base having a bowl and a rotatable drive plate to operably support a grinding wheel. A head is configured to support a specimen holder and has a first drive for rotational drive of the specimen holder and a second drive for moving the head and specimen holder toward and away from the drive plate. The head has a sleeve that is larger than the specimen holder. A cover is disposed over the bowl and has an opening larger than the sleeve so that the sleeve fits through the opening when the specimen holder is moved toward the rotatable drive plate. The grinding wheel is mountable to the plate in a single radial orientation only. A dressing system is operably connected to a controller to monitor the current of the drive plate motor and/or the head first drive actuates the dressing system based upon the current drawn by the drive plate motor and/or the head first drive motor falling below a predetermined value.

A sample grinder includes a base having a bowl and a rotatable drive plate to operably support a grinding wheel. A head is configured to support a specimen holder and has a first drive for rotational drive of the specimen holder and a second drive for moving the head and specimen holder toward and away from the drive plate. The head has a sleeve that is larger than the specimen holder. A cover is disposed over the bowl and has an opening larger than the sleeve so that the sleeve fits through the opening when the specimen holder is moved toward the rotatable drive plate. The grinding wheel is mountable to the plate in a single radial orientation only. A dressing system is operably connected to a controller to monitor the current of the drive plate motor and/or the head first drive actuates the dressing system based upon the current drawn by the drive plate motor and/or the head first drive motor falling below a predetermined value.

In some embodiments, the present disclosure relates to a method of performing a planarization process. The method may be performed by placing a wafer between a carrier head and an upper surface of a polishing pad. The carrier head has a retainer ring configured to surround the wafer, and the retainer ring has an abrasive structure configured to contact the upper surface of the polishing pad. Pressures within one or more chambers surrounded by the carrier head are independently regulated. The one or more chambers have one or more interior surfaces having a flexible membrane. The flexible membrane has a lower surface configured to contact the wafer. At least one of the carrier head or the polishing pad are moved relative to the other, and a roughness of the upper surface of the polishing pad is maintained within a predetermined range by using the abrasive structure of the retainer ring.

In some embodiments, the present disclosure relates to a method of performing a planarization process. The method may be performed by placing a wafer between a carrier head and an upper surface of a polishing pad. The carrier head has a retainer ring configured to surround the wafer, and the retainer ring has an abrasive structure configured to contact the upper surface of the polishing pad. Pressures within one or more chambers surrounded by the carrier head are independently regulated. The one or more chambers have one or more interior surfaces having a flexible membrane. The flexible membrane has a lower surface configured to contact the wafer. At least one of the carrier head or the polishing pad are moved relative to the other, and a roughness of the upper surface of the polishing pad is maintained within a predetermined range by using the abrasive structure of the retainer ring.