B24B55/02

Method of controlling a temperature of a chemical mechanical polishing process, temperature control, and CMP apparatus including the temperature control

A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.

CHEMICAL MECHANICAL POLISHING TEMPERATURE SCANNING APPARATUS FOR TEMPERATURE CONTROL

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

CHEMICAL MECHANICAL POLISHING TEMPERATURE SCANNING APPARATUS FOR TEMPERATURE CONTROL

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

TEMPERATURE-BASED IN-SITU EDGE ASSYMETRY CORRECTION DURING CMP

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

TEMPERATURE-BASED IN-SITU EDGE ASSYMETRY CORRECTION DURING CMP

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

TEMPERATURE-BASED ASSYMETRY CORRECTION DURING CMP AND NOZZLE FOR MEDIA DISPENSING

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

LIQUID CIRCULATION DEVICE FOR MACHINE TOOL AND TANK
20200306930 · 2020-10-01 ·

Provided is a liquid circulation device for a machine tool including a tank which has an introduction portion and a lead-out portion of a liquid, and in which a liquid circulated between the liquid circulation device and the machine tool is stored; and a heat exchanger disposed in the tank, in which the tank has a throttle portion in which a cross-sectional area of a liquid passage between the introduction portion and the lead-out portion is reduced and a first storage portion on the introduction portion side from the throttle portion, and at least a portion of the heat exchanger is disposed between a center of the first storage portion and the throttle portion.

LIQUID CIRCULATION DEVICE FOR MACHINE TOOL AND TANK
20200306930 · 2020-10-01 ·

Provided is a liquid circulation device for a machine tool including a tank which has an introduction portion and a lead-out portion of a liquid, and in which a liquid circulated between the liquid circulation device and the machine tool is stored; and a heat exchanger disposed in the tank, in which the tank has a throttle portion in which a cross-sectional area of a liquid passage between the introduction portion and the lead-out portion is reduced and a first storage portion on the introduction portion side from the throttle portion, and at least a portion of the heat exchanger is disposed between a center of the first storage portion and the throttle portion.

Polishing device

A polishing device configured to polish a glass substrate is disclosed, including a polishing wheel fixedly arranged, a cooling pipe, and a movable platform. The polishing wheel has an outer peripheral polishing surface, the glass substrate is placed on the platform and is driven by the platform to move so as to make the outer peripheral polishing surface polish the predetermined polishing surface of the glass substrate; the polishing wheel further has a chamber, and the cooling pipe containing a coolant is disposed in the chamber to decrease a temperature of the chamber and then to make temperatures of the outer peripheral polishing surface and the predetermined polishing surface during polishing is lower than a preset temperature. The disclosure solves the problem of high polishing temperature of the polishing wheel and the glass substrate, thereby enhancing the service life of the polishing wheel and the yield of the glass substrate.

Polishing device

A polishing device configured to polish a glass substrate is disclosed, including a polishing wheel fixedly arranged, a cooling pipe, and a movable platform. The polishing wheel has an outer peripheral polishing surface, the glass substrate is placed on the platform and is driven by the platform to move so as to make the outer peripheral polishing surface polish the predetermined polishing surface of the glass substrate; the polishing wheel further has a chamber, and the cooling pipe containing a coolant is disposed in the chamber to decrease a temperature of the chamber and then to make temperatures of the outer peripheral polishing surface and the predetermined polishing surface during polishing is lower than a preset temperature. The disclosure solves the problem of high polishing temperature of the polishing wheel and the glass substrate, thereby enhancing the service life of the polishing wheel and the yield of the glass substrate.